Kentarou Hayashi

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Speaker, Author, Co-Author

Thu. Sep 15, 2016 9:00 AM - 12:30 PM B1 (Exhibition Hall)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[15a-B1-1~13] 13.8 Compound and power electron devices and process technology

11:45 AM - 12:00 PM

△ [15a-B1-11] Study of forward-current crowded region in p-n junction diodes on free-standing GaN substrate Ⅱ

〇Kentarou Hayashi¹, Hiroshi Ohta¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tohru Nakamura¹, Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

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