Keita Konishi

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Speaker, Author, Co-Author

Thu. Sep 15, 2016 9:00 AM - 12:30 PM B1 (Exhibition Hall)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[15a-B1-1~13] 13.8 Compound and power electron devices and process technology

9:30 AM - 9:45 AM

[15a-B1-3] Ga₂O₃ Field-Plated Schottky Barrier Diodes with a Breakdown Voltage of Over 1 kV

〇Keita Konishi¹, Ken Goto^2,3, Rie Togashi³, Hisashi Murakami³, Yoshinao Kumagai³, Bo Monemar^3,4, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp., 3.TAT, 4.Linkoping Univ.)