Ryota Kunugi

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Speaker, Author, Co-Author

Thu. Sep 15, 2016 10:15 AM - 11:45 AM B9 (Exhibition Hall)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[15a-B9-1~6] 13.3 Insulator technology

11:15 AM - 11:30 AM

[15a-B9-5] Mechanism of Dipole Layer Formation at High-k/SiO₂ Interface:
Possibility of Oxygen Ion Migration Induced by the Imbalance of Multipole Potentials

〇(M2)Ryota Kunugi¹, Nobuhiro Nakagawa¹, Takanobu Watanabe¹ (1.Waseda Univ.)