Kazunori Kurishima

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Speaker, Author, Co-Author

Thu. Sep 15, 2016 1:30 PM - 6:00 PM A22 (Main Hall B)

Oral presentation
| Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15p-A22-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:30 PM - 4:45 PM

△ [15p-A22-12] Influence of ZrO₂ insulator/In-Si-O channel interface on transistor characteristic for oxide TFT

〇(D)Kazunori Kurishima^1,2, Toshihide Nabatame², Takio Kizu², Kazuhito Tsukagoshi², Takashi Onaya^1,2, Akihiko Ohi², Toyohiro Chikyow², Atsushi Ogura¹ (1.Meiji Univ., 2.NIMS WPI-MANA)