Kento Oikawa

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Speaker, Author, Co-Author

Thu. Sep 15, 2016 1:30 PM - 6:00 PM A22 (Main Hall B)

Oral presentation
| Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15p-A22-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:45 PM - 3:00 PM

△ [15p-A22-6] Possible application of IGZO thin film transistor with High-k SrTa₂O₆ as GI using High Pressure Water Vapor Annealing

〇(M2)Kento Oikawa¹, Mami Fujii¹, Juan Paolo Bermundo¹, Kiyoshi Uchiyama², Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST, 2.NIT, Tsuruoka College)