2:30 PM - 2:45 PM [15p-A23-6] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)-Trapping Ability of Oxygen by Bonded Region between Epitaxial Layer and Silicon Substrate at Room Temperature (2)- 〇Yoshihiro Koga1, Kazunari Kurita1 (1.SUMCO CORPORATION)