Takahiro Harie

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Speaker, Author, Co-Author

Thu. Sep 15, 2016 1:45 PM - 5:30 PM B2 (Exhibition Hall)

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15p-B2-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

1:45 PM - 2:00 PM

[15p-B2-1] Self-compensation mechanism of X-ray induced charge-up on SiO₂surface

〇Takahiro Harie^1,2 (1.Waseda Univ., 2.ISAS/JAXA)