Mengnan Ke

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Speaker, Author, Co-Author

Thu. Sep 15, 2016 1:15 PM - 5:45 PM B9 (Exhibition Hall)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[15p-B9-1~17] 13.3 Insulator technology

5:15 PM - 5:30 PM

▲ [15p-B9-16] Reduction of slow trap density in Al₂O₃/n-Ge MOS interfaces by insertion of GeO_xN_y

〇Mengnan Ke^1,2, Xiao Yu^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.Tokyo Univ., 2.JST-CREST)