Kei Nagatoshi

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 9:00 AM - 12:15 PM A21 (Main Hall A)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[16a-A21-1~12] 15.4 III-V-group nitride crystals

11:30 AM - 11:45 AM

[16a-A21-10] Formation of semipolar GaN etched by inductive coupled plasma reactive ion etching on highly chemical reaction

〇Kei Nagatoshi¹, Norihiro Itagaki¹, Ryo Inomoto¹, Narihito Okada¹, Tomoyasu Nishimiya², Humiharu Matsuo², Kazuyuki Tadatomo¹ (1.Yamaguchi University., 2.SAMCO Inc.)

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