Noriko Kurose

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 9:00 AM - 12:15 PM A21 (Main Hall A)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[16a-A21-1~12] 15.4 III-V-group nitride crystals

10:15 AM - 10:30 AM

[16a-A21-6] Formation of conductive AlN buffer layer toward vertical high power AlGaN FET on Si substrate

〇Noriko Kurose¹, Yoshinobu Aoyagi¹, Kota Ozeki², Tusutomu Araki² (1.Ritsumeikan Univ. Res. Org. Sci. Technol., 2.Ritsumeikan Univ. Fac. Sci. Technol.)

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