Yuya Urayama

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 9:00 AM - 12:15 PM A21 (Main Hall A)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[16a-A21-1~12] 15.4 III-V-group nitride crystals

10:45 AM - 11:00 AM

[16a-A21-7] Doping characteristics of n-GaN on Si

〇Yuya Urayama¹, Takeaki Hamada¹, Keisuke Nakamura¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech)