Hiromasa Watanabe

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 9:00 AM - 12:15 PM C302 (Nikko Houou)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[16a-C302-1~12] 15.6 Group IV Compound Semiconductors (SiC)

9:45 AM - 10:00 AM

[16a-C302-4] Evaluation of Filled Defects in Thermally-grown Oxide on Si and C Faces of 4H-SiC by Using Total Photoelectron Yield Spectroscopy

〇Hiromasa Watanabe¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)