Tsubasa Yoshimura

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 9:30 AM - 11:30 AM P5 (Exhibition Hall)

Poster presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[16a-P5-1~32] 15.4 III-V-group nitride crystals

9:30 AM - 11:30 AM

[16a-P5-27] Growth of Si-doped GaN single-crystalline layer by UHV sputter epitaxy

〇Tsubasa Yoshimura¹ (1.Tokyo Denki Univ.)