Takahiro Yamada

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 1:30 PM - 5:00 PM B1 (Exhibition Hall)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[16p-B1-1~13] 13.8 Compound and power electron devices and process technology

2:15 PM - 2:30 PM

[16p-B1-4] Effect of Capping Layer on Thermal Oxidation of GaN Surface

〇Takahiro Yamada¹, Kenta Watanabe¹, Mikito Nozaki¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

2:30 PM - 2:45 PM

[16p-B1-5] Improved Interface Properties of SiO₂/GaN MOS Capacitor by Interfacial GaO_x Formation with Post-oxidation Treatment

〇Takahiro Yamada¹, Kenta Watanabe¹, Mikito Nozaki¹, Akitaka Yoshigoe², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.JAEA)