Kohei Kuroyama

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 1:45 PM - 4:15 PM C302 (Nikko Houou)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[16p-C302-1~9] 15.6 Group IV Compound Semiconductors (SiC)

2:15 PM - 2:30 PM

[16p-C302-3] Study on wet-oxidized 4H-SiC m-face MOS interface by SiO₂ microscopic structure and electric characteristics

〇Kohei Kuroyama¹, Hirohisa Hirai¹, Kensaku Yamamoto², Mariko Hayashi², Koji Kita¹ (1.Tokyo Univ., 2.DENSO CORP.)