Tetsuo Hatakeyama

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 1:45 PM - 4:15 PM C302 (Nikko Houou)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[16p-C302-1~9] 15.6 Group IV Compound Semiconductors (SiC)

2:30 PM - 2:45 PM

[16p-C302-4] Characterization of Traps at Nitrided SiO₂/ SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements

〇Tetsuo Hatakeyama¹, Yuji Kiuchi¹, Mitsuru Sometani¹, Dai Okamoto², Shinsuke Harada¹, Hiroshi Yano², Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1.AIST, 2.Tsukuba Univ.)