YOSHIHITO KATSU

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 1:45 PM - 4:15 PM C302 (Nikko Houou)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[16p-C302-1~9] 15.6 Group IV Compound Semiconductors (SiC)

3:15 PM - 3:30 PM

△ [16p-C302-6] Ultra-high-temperature Oxidation under Low Oxygen Partial Pressure toward Ideal SiO₂/SiC Interface

〇YOSHIHITO KATSU¹, Hidenori Tsuji^1,2, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Fuji Electric Co., Ltd.)