Oral presentation

10 Spintronics and Magnetics » 10.2 Spin torque, spin current, circuits, and measurement technologies

[14a-C41-1~6] 10.2 Spin torque, spin current, circuits, and measurement technologies

Wed. Sep 14, 2016 9:00 AM - 10:30 AM C41 (Nikko Toki A)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

▼ [14a-C41-1] Relationship between 3-terminal signals and a dead layer of Fe/Mg/MgO/Si structure

〇Shoichi Sato¹, Nakane Ryosho^1,2, Hada Takato¹, Tanaka Masaaki^3,1 (1.EEIS Tokyo Univ., 2.IIIEE Tokyo Univ., 3.CSRN Tokyo Univ.)

9:15 AM - 9:30 AM

▲ [14a-C41-2] Spin injection into silicon in Fe/Mg/SiN_x/Si tunnel junctions

〇(M2)Takato Hada¹, Shoichi Sato¹, Ryosho Nakane¹, Masaaki Tanaka¹ (1.The Univ. of Tokyo)

9:30 AM - 9:45 AM

▼ [14a-C41-3] Prediction of the Enhanced Edelstein effect using the interband Rashba effect in InAlAs/InGaAs/InAlAs/InGaAs/InAlAs double quantum wells

〇(M1)Kiminori Okamoto¹, Atsushi Sawada¹, Carlos Egues², Takaaki Koga¹ (1.Hokkaido Univ., 2.sao paulo Univ.)

9:45 AM - 10:00 AM

[14a-C41-4] Electrical spin injection and detection in n⁺-Ge using Schottky tunnel contacts

〇Yuichi Fujita¹, Michihiro Yamada¹, Shinya Yamada¹, Takeshi Kanashima¹, Kentarou Sawano², Kohei Hamaya¹ (1.Osaka Univ., 2.Tokyo City Univ.)

10:00 AM - 10:15 AM

△ [14a-C41-5] Fabrication of a spin injection device having a top-gate structure

〇Wataru Nomura¹, Takumi Miyakawa¹, Masafumi Yamamoto¹, Tetsuya Uemura¹ (1.Hokkaido Univ.)

10:15 AM - 10:30 AM

▼ [14a-C41-6] Temperature dependence of spin transport properties in Si-based lateral spin valves

〇Soobeom Lee¹, Naoto Yamashita¹, Yuichiro Ando¹, Shinji Miwa², Yoshishige Suzuki², Hayato Koike³, Masashi Shiraishi¹ (1.Kyoto Univ., 2.Osaka Univ., 3.TDK corp.)

Session information

[14a-C41-1~6] 10.2 Spin torque, spin current, circuits, and measurement technologies

▼ [14a-C41-1] Relationship between 3-terminal signals and a dead layer of Fe/Mg/MgO/Si structure

▲ [14a-C41-2] Spin injection into silicon in Fe/Mg/SiN_x/Si tunnel junctions

▼ [14a-C41-3] Prediction of the Enhanced Edelstein effect using the interband Rashba effect in InAlAs/InGaAs/InAlAs/InGaAs/InAlAs double quantum wells

[14a-C41-4] Electrical spin injection and detection in n⁺-Ge using Schottky tunnel contacts

△ [14a-C41-5] Fabrication of a spin injection device having a top-gate structure

▼ [14a-C41-6] Temperature dependence of spin transport properties in Si-based lateral spin valves

Authentication

Session information

[14a-C41-1~6] 10.2 Spin torque, spin current, circuits, and measurement technologies

▼ [14a-C41-1] Relationship between 3-terminal signals and a dead layer of Fe/Mg/MgO/Si structure

▲ [14a-C41-2] Spin injection into silicon in Fe/Mg/SiNx/Si tunnel junctions

▼ [14a-C41-3] Prediction of the Enhanced Edelstein effect using the interband Rashba effect in InAlAs/InGaAs/InAlAs/InGaAs/InAlAs double quantum wells

[14a-C41-4] Electrical spin injection and detection in n+-Ge using Schottky tunnel contacts

△ [14a-C41-5] Fabrication of a spin injection device having a top-gate structure

▼ [14a-C41-6] Temperature dependence of spin transport properties in Si-based lateral spin valves

Authentication

▲ [14a-C41-2] Spin injection into silicon in Fe/Mg/SiN_x/Si tunnel junctions

[14a-C41-4] Electrical spin injection and detection in n⁺-Ge using Schottky tunnel contacts