Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[15a-A21-1~11] 15.4 III-V-group nitride crystals

Thu. Sep 15, 2016 9:00 AM - 12:00 PM A21 (Main Hall A)

Toru Akiyama(Mie Univ.), Yoshihiro Kangawa(Kyushu Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [15a-A21-1] X-ray microdiffraction analysis of microstructures in Na-flux GaN bulk crystals grown with controlling seed crystal surfaces and growth mode

〇(M2)Yuki Mizuta¹, Shotaro Takeuchi¹, Masayuki Imanishi², Mamoru Imade², Yasuhiko Imai³, Shigeru Kimura³, Yusuke Mori², Akira Sakai¹ (1.Graduate School of Engineering Science, Osaka Univ., 2.Graduate School of Engineering, Osaka Univ., 3.JASRI)

9:15 AM - 9:30 AM

△ [15a-A21-2] Fabrication of low-curvature GaN wafers using dissolving sapphire substrate in Na-flux method

〇(M2)Takumi Yamada¹, Masayuki Imanishi¹, Kosuke Nakamura¹, Kosuke Murakami¹, Hiroki Imabayashi¹, Masatomo Honjo¹, Mihoko Maruyama¹, Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (1.Grad. Sch. of Eng. Osaka Univ.)

9:30 AM - 9:45 AM

△ [15a-A21-3] Increase of Growth Rate of GaN Crystals in the Na-flux Point seed technique

〇Masatoshi Hayashi¹, Imanishi Masayuki¹, Yamada Takumi¹, Matsuo Daisuke¹, Murakami Kosuke¹, Maruyama Mihoko¹, Imade Mamoru¹, Yoshimura Masashi¹, Mori Yusuke¹ (1.Osaka Univ.)

9:45 AM - 10:00 AM

[15a-A21-4] Fabrication of a-plane AlN film on r-plane sapphire using Ga-Al LPE method

〇Masayoshi Adachi¹, Hiroyuki Fukuyama¹ (1.Tohoku Univ.)

10:00 AM - 10:15 AM

[15a-A21-5] Synthesis of Gallium Nitride particle from Gallium metal under atmospheric pressure Nitrogen

〇Shinya Akiyama¹, Makoto Watanabe¹, Yoshimi Takahashi¹, Hiroshi Arima², Kazumasa Sugiyama² (1.Dexerials Corp., 2.Tohoku Univ. IMR)

10:15 AM - 10:30 AM

[15a-A21-6] Liquid Phase Epitaxial growth of Gallium Nitride single crystal under atmospheric pressure Nitrogen

〇Shinya Akiyama¹, Makoto Watanabe¹, Yoshimi Takahashi¹, Kazumasa Sugiyama² (1.Dexerials Corp., 2.Tohoku Univ. IMR)

10:45 AM - 11:00 AM

△ [15a-A21-7] Rapid prediction of solution flow by machine learning
in AlN solution growth

〇Nobuhiko Kokubo¹, Yosuke Tsunooka¹, Shunta Harada¹, Miho Tagawa¹, Toru Ujihara¹ (1.Nagoya Univ.)

11:00 AM - 11:15 AM

[15a-A21-8] First-Principles Study of GaN(000-1) Surfaces under the OVPE Growth Conditions

〇Takahiro Kawamura^1,2, Akira Kitamoto², Mamoru Imade², Masashi Yoshimura², Yusuke Mori², Yoshitada Morikawa², Yoshihiro Kangawa³, Koichi Kakimoto³ (1.Mie Univ., 2.Osaka Univ., 3.RIAM, Kyushu Univ.)

11:15 AM - 11:30 AM

△ [15a-A21-9] Band alignment of graphene-like III-nitride semiconductors

〇Yuichi Ota¹ (1.TIRI)

11:30 AM - 11:45 AM

△ [15a-A21-10] Infrared Reflectance Spectroscopy of Free-standing GaN Bulk Substrates

〇Kazutaka Kanegae¹, Kaneko Mitsuaki², Kimoto Tsunenobu², Horita Masahiro², Suda Jun² (1.Kyoto Univ., 2.Dept. of Electron. Sci. & Eng., Kyoto Univ.)

11:45 AM - 12:00 PM

△ [15a-A21-11] Electric field and wavelength dependence of sub-bandgap optical absorption due to the Franz-Keldysh effect in GaN

〇Takuya Maeda¹, Masaya Okada², Masaki Ueno², Yoshiyuki Yamamoto², Masahiro Horita¹, Jun Suda¹ (1.Kyoto Univ., 2.Sumitomo Electric Industries,Ltd.)

Session information

[15a-A21-1~11] 15.4 III-V-group nitride crystals

△ [15a-A21-1] X-ray microdiffraction analysis of microstructures in Na-flux GaN bulk crystals grown with controlling seed crystal surfaces and growth mode

△ [15a-A21-2] Fabrication of low-curvature GaN wafers using dissolving sapphire substrate in Na-flux method

△ [15a-A21-3] Increase of Growth Rate of GaN Crystals in the Na-flux Point seed technique

[15a-A21-4] Fabrication of a-plane AlN film on r-plane sapphire using Ga-Al LPE method

[15a-A21-5] Synthesis of Gallium Nitride particle from Gallium metal under atmospheric pressure Nitrogen

[15a-A21-6] Liquid Phase Epitaxial growth of Gallium Nitride single crystal under atmospheric pressure Nitrogen

△ [15a-A21-7] Rapid prediction of solution flow by machine learning
in AlN solution growth

[15a-A21-8] First-Principles Study of GaN(000-1) Surfaces under the OVPE Growth Conditions

△ [15a-A21-9] Band alignment of graphene-like III-nitride semiconductors

△ [15a-A21-10] Infrared Reflectance Spectroscopy of Free-standing GaN Bulk Substrates

△ [15a-A21-11] Electric field and wavelength dependence of sub-bandgap optical absorption due to the Franz-Keldysh effect in GaN

Authentication

Session information

[15a-A21-1~11] 15.4 III-V-group nitride crystals

△ [15a-A21-1] X-ray microdiffraction analysis of microstructures in Na-flux GaN bulk crystals grown with controlling seed crystal surfaces and growth mode

△ [15a-A21-2] Fabrication of low-curvature GaN wafers using dissolving sapphire substrate in Na-flux method

△ [15a-A21-3] Increase of Growth Rate of GaN Crystals in the Na-flux Point seed technique

[15a-A21-4] Fabrication of a-plane AlN film on r-plane sapphire using Ga-Al LPE method

[15a-A21-5] Synthesis of Gallium Nitride particle from Gallium metal under atmospheric pressure Nitrogen

[15a-A21-6] Liquid Phase Epitaxial growth of Gallium Nitride single crystal under atmospheric pressure Nitrogen

△ [15a-A21-7] Rapid prediction of solution flow by machine learningin AlN solution growth

[15a-A21-8] First-Principles Study of GaN(000-1) Surfaces under the OVPE Growth Conditions

△ [15a-A21-9] Band alignment of graphene-like III-nitride semiconductors

△ [15a-A21-10] Infrared Reflectance Spectroscopy of Free-standing GaN Bulk Substrates

△ [15a-A21-11] Electric field and wavelength dependence of sub-bandgap optical absorption due to the Franz-Keldysh effect in GaN

Authentication

△ [15a-A21-7] Rapid prediction of solution flow by machine learning
in AlN solution growth