Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15a-B3-1~9] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Sep 15, 2016 9:00 AM - 11:15 AM B3 (Exhibition Hall)

Takashi Suemasu(Univ. of Tsukuba), Kenji Yamaguchi(QST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[15a-B3-1] Optimization for synthesis of precursor of Na-doped type II Si clathrate films

〇(M2)Masafumi Sakagami¹, Shingo Ito¹, Tomoya Fujioka¹, Fumitaka Ohashi¹, Takayuki Ban¹, Tetsuji Kume¹, Shuichi Nonomura¹ (1.Gifu Univ.)

9:15 AM - 9:30 AM

[15a-B3-2] A new synthesis method of Si clathrate film: Precursor film made by melting of NaSi

〇Taku Kozaka¹, Humitaka Ohashi¹, Tetsuji Kume¹, Shuichi Nonomura¹ (1.Gifu Univ.)

9:30 AM - 9:45 AM

[15a-B3-3] The effect of laser annealing for Ge thin films implanted with P⁺ and Sb⁺ ions

〇(M1)Shunya Sakai¹, Kazuya Yamamura¹, Hiroshi Nishigaki¹, Noriyuki Hasuike¹, Hiroshi Harima¹, Woo Sik Yoo² (1.Kyoto Inst. of Tech, 2.WaferMasters Inc.)

9:45 AM - 10:00 AM

[15a-B3-4] Search of the manufacturing conditions in the film quality improvement of Na contained type II clsthrate films

〇(M2)Tetsuya Mukai¹, Nanto Sugii¹, Fumitaka Ohashi¹, Tetsuji Kume¹, Himanshu Shekher Jha¹, Shuichi Nonomura¹ (1.Gifu Univ.)

10:00 AM - 10:15 AM

[15a-B3-5] Synthesis of thin film of guest free type ll Ge clathrate (Ge₁₃₆)

〇Shota Suzuki¹, Tetsuji Kume¹, Humitaka Ohashi¹, Shuichi Nonomura¹ (1.Gifu Univ.)

10:15 AM - 10:30 AM

▲ [15a-B3-6] Characterization of undoped-BaSi₂ on textured Si (001) substrate grown by molecular beam epitaxy

〇Tianguo Deng¹, Ryota Takabe¹, Suguru Yachi¹, Zhihao Xu¹, Miftahullatif Emha Bayu¹, Kaoru Toko¹, Noritaka Usami², Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Nagoya Univ.)

10:30 AM - 10:45 AM

▲ [15a-B3-7] Fabrication of nitrogen-doped BaSi₂ films on Si(111) by molecular beam epitaxy

〇Zhihao Xu¹, Tianguo Deng¹, Ryota Takabe¹, Miftahullatif Emha Bayu¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

10:45 AM - 11:00 AM

[15a-B3-8] Fabrication of a-Si/BaSi₂ stacked structure by thermal evaporation using a single source

〇Kosuke Hara¹, Cham Thi Trinh², Yasuyoshi Kurokawa², Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Noritaka Usami² (1.Univ. Yamanashi, 2.Nagoya Univ.)

11:00 AM - 11:15 AM

[15a-B3-9] The influence of Ag doping and the effect of two-step annealing on the solid phase growth of Mg₂Si films

〇(M1)Hideyuki Wada¹, Takehiro Suzuki¹, Gou Yasuda¹, Hiroshi Katsumata¹, Tomoharu Kataoka², Hidenari Yamamoto², Shinsuke Hirono², Mamoru Ishikiriyama² (1.Meiji Univ., 2.Toyota Motor Corp.)

Session information

[15a-B3-1~9] 13.2 Exploratory Materials, Physical Properties, Devices

[15a-B3-1] Optimization for synthesis of precursor of Na-doped type II Si clathrate films

[15a-B3-2] A new synthesis method of Si clathrate film: Precursor film made by melting of NaSi

[15a-B3-3] The effect of laser annealing for Ge thin films implanted with P⁺ and Sb⁺ ions

[15a-B3-4] Search of the manufacturing conditions in the film quality improvement of Na contained type II clsthrate films

[15a-B3-5] Synthesis of thin film of guest free type ll Ge clathrate (Ge₁₃₆)

▲ [15a-B3-6] Characterization of undoped-BaSi₂ on textured Si (001) substrate grown by molecular beam epitaxy

▲ [15a-B3-7] Fabrication of nitrogen-doped BaSi₂ films on Si(111) by molecular beam epitaxy

[15a-B3-8] Fabrication of a-Si/BaSi₂ stacked structure by thermal evaporation using a single source

[15a-B3-9] The influence of Ag doping and the effect of two-step annealing on the solid phase growth of Mg₂Si films

Authentication

Session information

[15a-B3-1~9] 13.2 Exploratory Materials, Physical Properties, Devices

[15a-B3-1] Optimization for synthesis of precursor of Na-doped type II Si clathrate films

[15a-B3-2] A new synthesis method of Si clathrate film: Precursor film made by melting of NaSi

[15a-B3-3] The effect of laser annealing for Ge thin films implanted with P+ and Sb+ ions

[15a-B3-4] Search of the manufacturing conditions in the film quality improvement of Na contained type II clsthrate films

[15a-B3-5] Synthesis of thin film of guest free type ll Ge clathrate (Ge136)

▲ [15a-B3-6] Characterization of undoped-BaSi2 on textured Si (001) substrate grown by molecular beam epitaxy

▲ [15a-B3-7] Fabrication of nitrogen-doped BaSi2 films on Si(111) by molecular beam epitaxy

[15a-B3-8] Fabrication of a-Si/BaSi2 stacked structure by thermal evaporation using a single source

[15a-B3-9] The influence of Ag doping and the effect of two-step annealing on the solid phase growth of Mg2Si films

Authentication

[15a-B3-3] The effect of laser annealing for Ge thin films implanted with P⁺ and Sb⁺ ions

[15a-B3-5] Synthesis of thin film of guest free type ll Ge clathrate (Ge₁₃₆)

▲ [15a-B3-6] Characterization of undoped-BaSi₂ on textured Si (001) substrate grown by molecular beam epitaxy

▲ [15a-B3-7] Fabrication of nitrogen-doped BaSi₂ films on Si(111) by molecular beam epitaxy

[15a-B3-8] Fabrication of a-Si/BaSi₂ stacked structure by thermal evaporation using a single source

[15a-B3-9] The influence of Ag doping and the effect of two-step annealing on the solid phase growth of Mg₂Si films