Poster presentation

3 Optics and Photonics » 3.15 Silicon photonics

[15a-P8-1~12] 3.15 Silicon photonics

Thu. Sep 15, 2016 9:30 AM - 11:30 AM P8 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:30 AM - 11:30 AM

[15a-P8-1] Temperature dependence of enhanced biaxial tensile strain of Ge layer grown on SOI substrate by using residual strain and microstructures

〇Satomi Ishida¹, Satoshi Kako^1,2, Katsuya Oda³, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.IIS, RCAST Tokyo Univ., 2.NanoQuine Tokyo Univ., 3.HITACHI R&D Group)

9:30 AM - 11:30 AM

△ [15a-P8-2] Fabrication of n-type Ge wires by local-melt lateral liquid-phase epitaxy from Sb-doped amorphous Ge

〇Takashi Tomita¹, Hiroshi Oka¹, Masahiro Koyama¹, Shogo Tanaka¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

9:30 AM - 11:30 AM

[15a-P8-3] Band engineering for Ge layers on Si using strained SiGe

〇Michiharu Nishimura¹, Yasuhiko Ishikawa¹ (1.Univ. of Tokyo)

9:30 AM - 11:30 AM

[15a-P8-4] Resonant photoluminescence of heavily n-doped Ge microdisks on Si

〇hideaki hashimoto¹, xuejun xu¹, kentarou sawano¹, takuya maruizumi¹ (1.Tokyo City Univ.)

9:30 AM - 11:30 AM

[15a-P8-5] Ca-mediated growth of Ge epitaxial films on Si(111)

〇Yuhsuke Yasutake^1,2, Susumu Fukatsu¹ (1.UTokyo, 2.JST-PRESTO)

9:30 AM - 11:30 AM

[15a-P8-6] Light Emission Properties of Strained Circular Microbridges on Ge-on-Insulator

〇Takeshi Ohno¹, Xuejun Xu¹, Kentarou Sawano¹, Takuya Maruizumi¹ (1.Tokyo City Univ.)

9:30 AM - 11:30 AM

[15a-P8-7] Carrier Lifetime Measurement in a Microcrystalline Silicon Wire Waveguide

〇Yuichi Maekawa¹, Ryohei Takei², Yuya Shoji¹, Tetsuya Mizumoto¹, Toshihiro Kamei² (1.Tokyo Tech, 2.National Institute of Advanced Industrial Science and Technology)

9:30 AM - 11:30 AM

[15a-P8-8] Si MMI-Waveguide-Type 2×2 Optical Switch

〇Yuji Fujiwara¹, Atsushi Ishikawa¹, Atsushi Matsumoto², Yuichi Matsushima¹, Hiroshi Ishikawa¹, Katsuyuki Utaka¹ (1.Waseda Univ., 2.NICT)

9:30 AM - 11:30 AM

[15a-P8-9] 1×2 Wavefront Control Type Compact Silicon Wavelength Selective Switch

〇Fumi Nakamura¹, Kyosuke Muramatsu, Hiroyuki Tsuda¹ (1.Keio Univ.)

9:30 AM - 11:30 AM

[15a-P8-10] High-Speed Switching of Silicon 2×2 Mach-Zehnder-Type Optical Switch

〇Sho Asakawa¹, Yusuke Shimada¹, Daisuke Suehiro¹, Kana Shimizu¹, Yuichi Matsushima², Hiroshi Ishikawa¹, Katsuyuki Utaka¹ (1.Waseda Univ., 2.GCS, Waseda Univ.)

9:30 AM - 11:30 AM

[15a-P8-11] Design of directional coupling type Si polarization splitter

〇Shigeaki Sakai¹, Naotaka Iwamoto¹, Hiroyuki Tsuda¹ (1.Keio Univ.)

9:30 AM - 11:30 AM

[15a-P8-12] TM mode SOI optical refractive index sensor using a rectangle cavity for high sensitivity

〇(M1)Ken Fujiwara¹, Hiroki Takahisa¹, Manuel Mendez-Astudillo¹, Hideaki Okayama^1,2, HIrochika Nakajima¹ (1.Waseda Univ., 2.Oki Electric Industry Co., Ltd.)

Session information

[15a-P8-1~12] 3.15 Silicon photonics

[15a-P8-1] Temperature dependence of enhanced biaxial tensile strain of Ge layer grown on SOI substrate by using residual strain and microstructures

△ [15a-P8-2] Fabrication of n-type Ge wires by local-melt lateral liquid-phase epitaxy from Sb-doped amorphous Ge

[15a-P8-3] Band engineering for Ge layers on Si using strained SiGe

[15a-P8-4] Resonant photoluminescence of heavily n-doped Ge microdisks on Si

[15a-P8-5] Ca-mediated growth of Ge epitaxial films on Si(111)

[15a-P8-6] Light Emission Properties of Strained Circular Microbridges on Ge-on-Insulator

[15a-P8-7] Carrier Lifetime Measurement in a Microcrystalline Silicon Wire Waveguide

[15a-P8-8] Si MMI-Waveguide-Type 2×2 Optical Switch

[15a-P8-9] 1×2 Wavefront Control Type Compact Silicon Wavelength Selective Switch

[15a-P8-10] High-Speed Switching of Silicon 2×2 Mach-Zehnder-Type Optical Switch

[15a-P8-11] Design of directional coupling type Si polarization splitter

[15a-P8-12] TM mode SOI optical refractive index sensor using a rectangle cavity for high sensitivity

Authentication