Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15p-B3-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Sep 15, 2016 1:45 PM - 4:45 PM B3 (Exhibition Hall)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[15p-B3-1] Cross-sectional Analysis of BaSi₂/SUS304 Deposited by Vacuum Evaporation

〇Takamichi Suhara¹, Kenta Aoyagi¹, Kosuke O. Hara², Takashi Suemasu³, Noritaka Usami¹ (1.Nagoya Univ., 2.Univ. of Yamanashi, 3.Univ. of Tsukuba)

2:00 PM - 2:15 PM

△ [15p-B3-2] Study of MBE-β-FeSi₂/Si hetero-epitaxy using Ion Multiple Scattering

〇Masaya Fuchi¹, Mikihiro Arima¹, Yoshikazu Terai¹, Kazumasa Narumi², Yoshihito Maeda^1,2 (1.Kyutech, 2.QST-QuBS)

2:15 PM - 2:30 PM

[15p-B3-3] Analysis of vibrational modes in BaSi₂ by polarized Raman spectra (II)

〇Naoki Murakoso¹, Motoki Iinuma¹, Takashi Suemasu², Yoshikazu Terai¹ (1.Kyushu Inst. of Tech., 2.Univ. of Tsukuba)

2:30 PM - 2:45 PM

[15p-B3-4] First-principles study on stability and diffusion of ionized impurity atom in BaSi₂

〇Akito Nagasawa¹, Nakayama Takashi¹, Oosuga Yuki¹ (1.Chiba Univ.)

2:45 PM - 3:00 PM

△ [15p-B3-5] Diffusion Analysis of Oxidation Process in β-FeSi₂/Si Nanocomposite

〇Mikihiro Arima¹, Masaya Fuchi¹, Kazumasa Narumi², Yoshihito Maeda^1,2 (1.Kyutech, 2.QST)

3:00 PM - 3:15 PM

[15p-B3-6] Correlation between direct transition energies and electrical properties in β-FeSi₂ epitaxial films

〇Motoki Iinuma¹, Naoki Murakoso¹, Shuya Ikeda¹, kazuya Ogi¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

3:15 PM - 3:30 PM

△ [15p-B3-7] Annealing effects on conduction type in Mg₂Si thin films

〇Mao Kurokawa¹, Mutsuo Uehara¹, Takao Shimizu¹, Kensuke Akiyama^1,2, Masaaki Matsushima¹, Hiroshi Uchida³, Yoshisato Kimura¹, Hiroshi Funakubo¹ (1.Tokyo Institute of Technology, 2.Kanagawa Industrial Technology Center, 3.Sophia Univ.)

3:30 PM - 3:45 PM

△ [15p-B3-8] Optical properties of Mg₂Si pn-diodes by back-illumination

〇Yuma Onizawa¹, Tomohiro Akiyama¹, Tatsuya Nakano¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

3:45 PM - 4:00 PM

[15p-B3-9] Dependence of p-BaSi₂/n-Si solar cells performance on p-BaSi₂ layer thickness

〇Suguru Yachi¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

4:00 PM - 4:15 PM

△ [15p-B3-10] Effect of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi₂/n-Si heterojunction solar cells

〇Ryota Takabe¹, Suguru Yachi¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

4:15 PM - 4:30 PM

[15p-B3-11] Application of hole selective BaSi₂ contact for Si heterojunction solar cells

〇(M1)Kazuma Takahashi¹, Yoshihiko Nakagawa¹, Kosuke Hara², Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ., 2.Univ. of Yamanashi)

4:30 PM - 4:45 PM

[15p-B3-12] Device Structure Optimization of BaSi₂ solar cells via Drift-Diffusion Simulations

〇Atsuya Sasaki¹, Akito Sasaki¹, Yoshinori Kataoka¹, Akira Sato¹, Hideaki Hirabayashi¹, Shuichi Saito¹, Kumpei Kobayashi¹, Shigeyuki Takagi², Nobuyuki Sano³ (1.Toshiba Materials, 2.Tokyo Univ. of Tech., 3.Univ. of Tsukuba)

Session information

[15p-B3-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

[15p-B3-1] Cross-sectional Analysis of BaSi₂/SUS304 Deposited by Vacuum Evaporation

△ [15p-B3-2] Study of MBE-β-FeSi₂/Si hetero-epitaxy using Ion Multiple Scattering

[15p-B3-3] Analysis of vibrational modes in BaSi₂ by polarized Raman spectra (II)

[15p-B3-4] First-principles study on stability and diffusion of ionized impurity atom in BaSi₂

△ [15p-B3-5] Diffusion Analysis of Oxidation Process in β-FeSi₂/Si Nanocomposite

[15p-B3-6] Correlation between direct transition energies and electrical properties in β-FeSi₂ epitaxial films

△ [15p-B3-7] Annealing effects on conduction type in Mg₂Si thin films

△ [15p-B3-8] Optical properties of Mg₂Si pn-diodes by back-illumination

[15p-B3-9] Dependence of p-BaSi₂/n-Si solar cells performance on p-BaSi₂ layer thickness

△ [15p-B3-10] Effect of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi₂/n-Si heterojunction solar cells

[15p-B3-11] Application of hole selective BaSi₂ contact for Si heterojunction solar cells

[15p-B3-12] Device Structure Optimization of BaSi₂ solar cells via Drift-Diffusion Simulations

Authentication

Session information

[15p-B3-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

[15p-B3-1] Cross-sectional Analysis of BaSi2/SUS304 Deposited by Vacuum Evaporation

△ [15p-B3-2] Study of MBE-β-FeSi2/Si hetero-epitaxy using Ion Multiple Scattering

[15p-B3-3] Analysis of vibrational modes in BaSi2 by polarized Raman spectra (II)

[15p-B3-4] First-principles study on stability and diffusion of ionized impurity atom in BaSi2

△ [15p-B3-5] Diffusion Analysis of Oxidation Process in β-FeSi2/Si Nanocomposite

[15p-B3-6] Correlation between direct transition energies and electrical properties in β-FeSi2 epitaxial films

△ [15p-B3-7] Annealing effects on conduction type in Mg2Si thin films

△ [15p-B3-8] Optical properties of Mg2Si pn-diodes by back-illumination

[15p-B3-9] Dependence of p-BaSi2/n-Si solar cells performance on p-BaSi2 layer thickness

△ [15p-B3-10] Effect of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi2/n-Si heterojunction solar cells

[15p-B3-11] Application of hole selective BaSi2 contact for Si heterojunction solar cells

[15p-B3-12] Device Structure Optimization of BaSi2 solar cells via Drift-Diffusion Simulations

Authentication

[15p-B3-1] Cross-sectional Analysis of BaSi₂/SUS304 Deposited by Vacuum Evaporation

△ [15p-B3-2] Study of MBE-β-FeSi₂/Si hetero-epitaxy using Ion Multiple Scattering

[15p-B3-3] Analysis of vibrational modes in BaSi₂ by polarized Raman spectra (II)

[15p-B3-4] First-principles study on stability and diffusion of ionized impurity atom in BaSi₂

△ [15p-B3-5] Diffusion Analysis of Oxidation Process in β-FeSi₂/Si Nanocomposite

[15p-B3-6] Correlation between direct transition energies and electrical properties in β-FeSi₂ epitaxial films

△ [15p-B3-7] Annealing effects on conduction type in Mg₂Si thin films

△ [15p-B3-8] Optical properties of Mg₂Si pn-diodes by back-illumination

[15p-B3-9] Dependence of p-BaSi₂/n-Si solar cells performance on p-BaSi₂ layer thickness

△ [15p-B3-10] Effect of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi₂/n-Si heterojunction solar cells

[15p-B3-11] Application of hole selective BaSi₂ contact for Si heterojunction solar cells

[15p-B3-12] Device Structure Optimization of BaSi₂ solar cells via Drift-Diffusion Simulations