Oral presentation

7 Beam Technology and Nanofabrication » 7.2 Applications and technologies of electron beams

[15p-B5-1~19] 7.2 Applications and technologies of electron beams

Thu. Sep 15, 2016 1:15 PM - 6:45 PM B5 (Exhibition Hall)

Yoichiro Neo(Shizuoka Univ.), Tadahiro Kawasaki(JFCC), Kazuo Yamamoto(JFCC)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:45 PM

[15p-B5-1] [INVITED] Novel transmission electron microscope using a semiconductor photocathode

〇Makoto Kuwahara^1,2, Kota Aoki², Hiroshi Suzuki², Toru Ujihara^1,2, Koh Saitoh^1,2, Nobuo Tanaka¹ (1.IMaSS, Nagoya Univ., 2.Nagoya Univ.)

1:45 PM - 2:00 PM

[15p-B5-2] [Young Scientist Presentation Award Speech] Analysis for nano domain structure of BaTiO₃ film by detecting slight cation displacements

〇Shunsuke Kobayashi¹, Takeharu Kato¹, Yuichi Ikuhara^1,2, Takahisa Yamamoto^1,3 (1.JFCC, 2.Univ. Tokyo, 3.Nagoya Univ.)

2:00 PM - 2:15 PM

[15p-B5-3] Surface reconstruction states of LiFePO₄ before and after delithiation

〇Shunsuke Kobayashi¹, Craig Fisher¹, Takeharu Kato¹, Tsukasa Hirayama¹, Akihide Kuwabara¹, Yoshio Ukyo², Yuichi Ikuhara^1,3 (1.JFCC, 2.Kyoto Univ., 3.Univ. Tokyo)

2:15 PM - 2:30 PM

[15p-B5-4] Transmission electron microscopy study of the LiMn₂O₄/Na_xMnO₂ interface

〇Mitsunori Kitta¹, Tomoki Akita¹, Masanori Kohyama¹ (1.AIST/RIECEN)

2:30 PM - 2:45 PM

[15p-B5-5] Observation of Insulators using Fountain Detector

〇Takashi Sekiguchi^1,2, Toshihide Agemura², Kimura Takashi¹, Hideo Iwai¹ (1.NIMS, 2.Univ. Tsukuba)

2:45 PM - 3:00 PM

[15p-B5-6] Dynamic Analysis of Sample Thickness using Real-Time Wave Field Reconstruction Method

〇(D)Takahiro Tamura¹, Yoshihide Kimura¹, Yoshizo Takai¹ (1.Osaka Univ.)

3:00 PM - 3:15 PM

[15p-B5-7] STEM phase imaging technique by using quasi-Bessel beam and annularly arrayed pixel detector

〇Tadahiro Kawasaki^1,2,3, Takafumi Ishida^2,3, Tetsuji Kodama⁴, Takaomi Matsutani⁵, Takayoshi Tanji^2,3, Takashi Ikuta⁶ (1.JFCC, 2.IMaSS, Nagoya Univ., 3.GREEN, 4.Meijo Univ., 5.Kinki Univ., 6.OECU)

3:30 PM - 3:45 PM

[15p-B5-8] Measurements of spin-polarization of electrons field-emitted from Cr/W<001> emitter

〇Kento Miyazaki¹, Naoya Sakai¹, Shigekazu Nagai^1,2, Tatsuo Iwata^1,2, Kazuo Kajiwara^1,2, Koichi Hata^1,2 (1.Mie Univ., 2.Mie CUTE.)

3:45 PM - 4:00 PM

[15p-B5-9] Thorium diffusion process of Th-W FE cathode

〇Ryotaro Yamanashi¹, Yoichiro Neo¹, Teruaki Ohno², Hidenori Mimura¹ (1.Shizuoka Univ. RIE, 2.Technex Lab)

4:00 PM - 4:15 PM

[15p-B5-10] Transition of field emission characteristics following formation of nano-pyramid

〇(D)Hirotaka Asai¹, Shigeki Kumagai¹, Hidekazu Murata¹, Eiji Rokuta¹ (1.Meijo Univ.)

4:15 PM - 4:30 PM

[15p-B5-11] Fabrication of Spindt-type Field Emitter Arrays by Minimal Lithography System

〇Masayoshi Nagao¹, Noriyuki Tatsumi¹, Katsuhisa Murakami¹, Sommawan Khumpuang^1,2, Shiro Hara^1,2, Yasuhito Gotoh³ (1.AIST, 2.Minimal, 3.Kyoto Univ.)

4:30 PM - 4:45 PM

[15p-B5-12] Long time operation of volcano-structured Ni Spindt-type field emitter array

〇Masayoshi Nagao¹, Yasuhito Gotoh², Hidenori Mimura³, Yoichiro Neo³, Sommawan Khumpuang^1,4, Shiro Hara^1,4 (1.AIST, 2.Kyoto Univ., 3.Shizuoka Univ., 4.Minimal)

4:45 PM - 5:00 PM

[15p-B5-13] On the response time of GaAs NEA photo-cathode Ⅱ

〇(M2)Keigo Mitsuno¹, Tomoaki Masuzawa¹, Yoshinori Hatanaka¹, Makoto Hosoda¹, Yoichiro Neo¹, Hidenori Mimura¹ (1.Shizuoka Univ.)

5:15 PM - 5:30 PM

△ [15p-B5-14] Improvement of Image Geometric Distortion of HEED-HARP Image Sensor

〇Katsunori Obata¹, Shingo Iwasaki¹, Shutetsu Akiyama² (1.Pioneer Corp., 2.Pioneer MTC)

5:30 PM - 5:45 PM

[15p-B5-15] Electron Emission Property of Field Emitter Arrays under X-ray Irradiation

〇Yasuhito Gotoh¹, Hiroshi Tsuji¹, Masayoshi Nagao², Masafumi Akiyoshi³, Ikuji Takagi¹ (1.Kyoto Univ., 2.AIST, 3.Osaka Pref. Univ.)

5:45 PM - 6:00 PM

[15p-B5-16] I-V characteristics of CdTe/CdS photodiode for radiation tolerant FEA image sensor under gamma-ray irradiation

〇Tamotsu Okamoto¹, Tomoya Igari¹, Yasuhito Gotoh², Nobuhiro Sato², Masafumi Akiyoshi³, Ikuji Takagi² (1.NIT, Kisarazu Coll., 2.Kyoto Univ., 3.Osaka Pref. Univ.)

6:00 PM - 6:15 PM

[15p-B5-17] Photo-conversion characteristics of CdTe/CdS diode before/after gamma-ray irradiation

〇Tomoaki Masuzawa¹, Yoichiro Neo¹, Yasuhito Gotoh², Tamotsu Okamoto³, Masayoshi Nagao⁴, Nobuhiro Sato², Masafumi Akiyoshi⁵, Ikuji Takagi², Hidenori Mimura¹ (1.Shizuoka Univ., 2.Kyoto Univ., 3.National Inst. of Technol., Kisarazu College, 4.AIST, 5.Osaka Prefecture Univ.)

6:15 PM - 6:30 PM

[15p-B5-18] Electron emission properties of GOS type electron emission devices

〇Katsuhisa Murakami¹, Shunsuke Tanaka², Masayoshi Nagao¹, Yoshihiro Nemoto³, Masaki Takeguchi³, Jun-ichi Fujita² (1.AIST, 2.Univ. Tsukuba, 3.NIMS)

6:30 PM - 6:45 PM

[15p-B5-19] Measurement of fogging electron with accelerating voltage in SEM

〇Yoshifumi Hagiwara^1,2, Taku Noda^1,2, Masatoshi Kotera¹, Raynald Gauvin² (1.Osaka Institute of Technology, 2.McGill University)

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