Oral presentation

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[16a-A24-1~12] 16.3 Bulk, thin-film and other silicon-based solar cells

Fri. Sep 16, 2016 9:00 AM - 12:15 PM A24 (201A)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[16a-A24-1] Preparation of axial type wire-structure crystalline silicon solar cells.

〇YUSUKE SHIRAYANAGI¹, YASUTOSHI YASHIKI¹, SHINYA KATO², MAKOTO KONAGAI^1,3 (1.JST., 2.Nagoya. Inst. Tech., 3.Tokyo City Univ.)

9:15 AM - 9:30 AM

[16a-A24-2] Effect of air-exposure on lateral Si nanowall photovoltaic characteristics

〇Suguru Tatsunokuchi¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Hiroshi Iwai², Kuniyuki Kakushima¹ (1.Tokyo Tech. School of Eng, 2.Tokyo Tech. IIR)

9:30 AM - 9:45 AM

[16a-A24-3] Electrical Properties of Si/SiO₂ Superlattice Micro Disk Solar Cells

〇Shigeru Yamada¹, Yusuke Shirayanagi¹, Teruhiko Narihara¹, Masatoshi Kumada¹, Yukimi Ichikawa^1,2, Makoto Konagai^1,2, Shinsuke Miyajima³ (1.JST, 2.Tokyo City Univ., 3.Tokyo Tech.)

9:45 AM - 10:00 AM

[16a-A24-4] Film growth of amorphous silicon under high substrate temperature and surface dangling-bond reducation

〇(M1)Haruka Kubota¹, Yasushi Sobajima¹, Akihisa Matsuda¹, Hiroaki Okamoto¹ (1.Graduate School of Engineering Science, Osaka Univ.)

10:00 AM - 10:15 AM

[16a-A24-5] Nip a-Si:H and multi-junction thin-film silicon solar cells grown with triode PECVD

〇Hitoshi Sai¹, Takuya Matsui¹, Koji Matsubara¹ (1.AIST)

10:15 AM - 10:30 AM

[16a-A24-6] Development of removal method of phosphorous impurity in Si purification process by high-pressure hydrogen plasma chemical transport

〇Hiromasa Ohmi¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹ (1.Osaka University)

10:45 AM - 11:00 AM

[16a-A24-7] Influence of Cu₂O:N sputtering on i-a-Si:H/c-Si heterojunction

〇Yutaro Takei¹, Yuki Takiguchi¹, Kazuyoshi Nakada², Shinsuke Miyajima² (1.Physical Electronics, Tokyo Tech., 2.Electrical and Electronic Engineering, Tokyo Tech.)

11:00 AM - 11:15 AM

[16a-A24-8] Workfunctions at transition-metal-oxide/insulator interfaces of heterojunction contacts

〇(PC)Takefumi Kamioka¹, Yutaka Hayashi¹, Yuki Isogai¹, Kyotaro Isogai², Yoshio Ohshita¹ (1.TTI, 2.Meiji Univ.)

11:15 AM - 11:30 AM

[16a-A24-9] Limiting factors of the open-circuit voltage of hetero-junction Si solar cells

〇Ryousuke Satou¹, Kentarou Sawano¹, Porponth Sichanugrist³, Kazuyoshi Nakada², Makoto Sichanugrist^1,3 (1.Tokyo City Univ., 2.Tokyo Tech, 3.JST)

11:30 AM - 11:45 AM

[16a-A24-10] Effectiveness of a-Si:H Front Surface Field Layersin Back Contacted Silicon Heterojunction Solar Cells

〇Hiroshi Noge¹, Hideyuki Takagishi¹, Kimihiko Saito¹, Michio Kondo^1,2 (1.Fukushima Univ., 2.FREA)

11:45 AM - 12:00 PM

▲ [16a-A24-11] How Do We Apply Cat-doping to Improve Passivation Quality of SiNx Single Layer Prepared by Cat-CVD on Crystalline Silicon?

〇(P)ThiCamTu Huynh¹, Koichi Koyama¹, Cong Thanh Nguyen¹, Shigeki Terashima¹, Hideki Matsumura¹ (1.JAIST)

12:00 PM - 12:15 PM

[16a-A24-12] Development of Simple Fabrication Process of Back Contact Hetero-Junction Solar cells by Plasma Ion Implantation -- Control of Conduction Type of a-Si/c-Si Electrodes

〇Koichi Koyama¹, Noboru Yamaguchi², Miwa Tanaka², Hideo Suzuki², Keisuke Ohdaira¹, Hideki Matsumura¹ (1.JAIST, 2.ULVAC)

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