Oral presentation

[14p-A25-1~21] 15.1 Bulk crystal growth

Wed. Sep 14, 2016 1:15 PM - 7:00 PM A25 (202)

Yuui Yokota(Tohoku Univ.), Hiraku Ogino(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:15 PM - 1:45 PM

[14p-A25-1] [INVITED] Single Crystal Growth by Vertical Bridgeman Techniques

〇Keigo Hoshikawa¹ (1.Shinshu University)

1:45 PM - 2:00 PM

[14p-A25-2] Growth direction of β-Ga₂O₃ single crystals by directionally solidification

〇Takumi Kobayashi¹, Etsuko Ohba¹, Chihiro Miyagawa¹, Yoshio Nakamura¹, Keigo Hoshikawa² (1.FMC, 2.Shinshu Univ.)

2:00 PM - 2:15 PM

[14p-A25-3] Defect characterization of directionally solidified β-Ga₂O₃ single crystals

〇Etsuko Ohba¹, Takumi Kobayashi¹, Yoshio Nakamura¹, Motohisa Kado², Hiroaki Saitou², Keigo Hoshikawa³ (1.FMC, 2.Toyota Motor Corp., 3.Shinshu Univ.)

2:15 PM - 2:30 PM

[14p-A25-4] Electrical properties of b-Ga₂O₃ single crystal grown in ambient air

〇Motohisa Kado¹, Etsuko Ohba², Takumi Kobayashi², Yoshio Nakamura², Keigo Hoshikawa³ (1.Toyota Motor Co., 2.Fujikoshi Machinery Co., 3.Shinshu Univ.)

2:30 PM - 2:45 PM

[14p-A25-5] Effects of Growth Condition of the IR-FZ on the Interface Shape of the Molten Zone

〇Satoshi Watauchi¹, Md. Mukter Hossain¹, Masanori Nagao¹, Isao Tanaka¹ (1.Univ. of Yamanashi)

2:45 PM - 3:00 PM

[14p-A25-6] Optimization of structures in CZ furnace by numerical simulation for CZ-Si crystal growth

〇Yuta Saibara¹, Taiki Komatsu¹, Hodaka Kutsukage², Toshinori Taishi², Keigo Hoshikawa² (1.M.SETEK CO.,LTD, 2.Shinshu Univ)

3:00 PM - 3:15 PM

[14p-A25-7] Approach to MCZ-Si Growth Technique with Rare-Earth Magnet

〇Yuta Watanabe¹, Yuta Saibara¹, Nobumasa Kariya¹, Masaaki Aoki², Mikihiko Nakazima², Kouichi Oka³, Hisaki Akasaki⁴, Keigo Hoshikawa⁴ (1.M.SETEK CO.,LTD, 2.NEOMAX ENGIEERING CO.,LTD., 3.Kochi Univ.technol, 4.Shinshu Univ.)

3:15 PM - 3:30 PM

[14p-A25-8] Ionic conductivity and electrode-electrolyte interfacial resistance in Li_3xLa_2/3-xTiO₃

〇(M2)Kensuke Asai¹, Yasuyuki Fujiwara¹, Toshinori Taishi¹, Keigo Hoshikawa¹, Keiichi Kohama² (1.Shinshu Univ., 2.Toyota Motor Corp.)

3:30 PM - 3:45 PM

[14p-A25-9] SiGe crystal growth by the TLZ Method

〇Yasutomo Arai¹, Kyoichi Kinoshita² (1.JAXA, 2.JSF)

3:45 PM - 4:00 PM

[14p-A25-10] Effects of convection in a melt for SiGe crystal growth by the TLZ Method

〇Kyoichi Kinoshita¹, Yasutomo Arai², Yuko Inatomi², Takao Tsukada³ (1.JSF, 2.JAXA, 3.Tohoku Univ.)

4:15 PM - 4:30 PM

[14p-A25-11] Growth of InGaSb ternary alloys from Ga and Sb faces of GaSb(111) seed under prolonged microgravity at the International Space Station

〇Yasuhiro Hayakawa¹, Velu Nirmal Kumar¹, Mukannan Arivanandhan¹, Koyama Tadanobu¹, Momose Yoshimi¹, Sakata Kaoruho², Ozawa Tetsuo³, Okano Yasunori⁴, Inatomi Yuko² (1.RIE Shizuoka Univ, 2.JAXA, 3.Shizuoka Insti Sci. and Tech, 4.Osaka Univ.)

4:30 PM - 4:45 PM

[14p-A25-12] Growth of Ir and Pt fibers by Micro-Pulling-down Method and observation of their local structures

〇Yuui Yokota¹, Nihei Takayuki², Kamada Kei^1,3, Ohashi Yuji², Arakawa Mototaka¹, Kurosawa Shunsuke¹, Yoshikawa Akira^1,2,3 (1.NICHe, Tohoku Univ., 2.IMR, Tohoku Univ., 3.C&A)

4:45 PM - 5:00 PM

[14p-A25-13] Crystal Growth and Piezoelectric Properties of Ca₃Ta(Ga_,R)₃Si₂O₁₄ Single Crystals

〇(M1)Yu Igarashi¹, Yuji Ohashi^1,4, Yuui Yokota², Mototaka Arakawa², Kenji Inoue⁴, Akihiro Yamaji¹, Yasuhiro Shoji^1,3, Kei Kamada^2,3,4, Shunsuke Kurosawa², Akira Yoshikawa^1,2,3,4 (1.IMR Tohoku Univ., 2.NICHe Tohoku Univ., 3.C&A, 4.Piezo Studio)

5:00 PM - 5:15 PM

[14p-A25-14] Growth of Eu:Li(Ca_,Sr)AlF₆ neutron scintillator single crystals and evaluations of the scintillation properties

〇(M2)Chieko Tanaka¹, Yuui Yokota², Shunsuke Kurosawa², Akihiro Yamaji¹, Yuji Ohashi¹, Kei Kamada^2,3, Akira Yoshikawa^1,2,3 (1.IMR, Tohoku Univ., 2.NICHe, Tohoku Univ., 3.C&A)

5:15 PM - 5:30 PM

[14p-A25-15] Crystal growth and evaluations of Ce:Cs₂LiYCl₆ single crystals by modified micro-pulling down method

〇Tomoki Ito¹, Yuui Yokota², Shunsuke Kurosawa^1,2, Kamada Kei^2,3, Ohashi Yuji¹, Arakawa Mototaka², Yoshikawa Akira^1,2,3 (1.IMR Tohoku Univ., 2.NICHe Tohoku Univ., 3.C&A Corp.)

5:30 PM - 5:45 PM

[14p-A25-16] Growth and luminescence properties of Na doped Cs₂HfCl₆ scintillation crystal

〇Shohei Kodama¹, Shunsuke Kurosawa², Takahiko Horiai¹, Akihiro Yamaji¹, Yuui Yokota², Jan Pejchal⁴, Yuji Ohashi¹, Mototaka Arakawa², Kei Kamada^2,3, Martin Nikl⁴, Akira Yoshikawa^1,2,3 (1.IMR Tohoku Univ., 2.NICHe Tohoku Univ., 3.C&A, 4.CAS Phys.)

5:45 PM - 6:00 PM

[14p-A25-17] Improvement of temporal stability of acetaminophen form ΙΙ crystallized by using ultrasonic irradiation

〇(M2)Shin Fujiwara¹, Mori Yoichiro¹, Yoshinori Takahashi^1,2, Mihoko Maruyama¹, Hiroshi Yoshikawa^1,3, Shino Okada², Hiroaki Adachi^1,2, Shigeru Sugiyama⁴, Kazufumi Takano^2,5, Satoshi Murakami^2,6, Hiroyoshi Matsumura^2,7, Tsuyoshi Inoue^1,2, Masashi Yoshimura¹, Yusuke Mori^1,2 (1.Grad. Sch. of Eng., Osaka Univ., 2.SOSHO Inc., 3.Dept. of Chem., Saitama Univ., 4.Grad. Sch. of Sci., Osaka Univ., 5.Grad. Sch. of Life and Environ. Sci., Kyoto Pref. Univ., 6.Grad. Sch. of Biosci. And Biotech., Tokyo Inst. of Tech., 7.Sch. of Life Sci., Ritsumeikan Univ.)

6:00 PM - 6:15 PM

△ [14p-A25-18] Growth of metastable phase of pharameceutical compound acetaminophen by using solvent-mediated phase transformation

〇Riki Fujimoto¹, Yoichiro Mori¹, Yoshinori Takahashi^1,2, Mihoko Maruyama¹, Hiroshi Yoshikawa^1,3, Shino Okada², Hiroaki Adachi^1,2, Shigeru Sugiyama⁴, Kazufumi Takano^2,5, Satoshi Murakami^2,6, Hiroyoshi Matsumura^2,7, Tsuyoshi Inoue^1,2, Masashi Yoshimura¹, Yusuke Mori^1,2 (1.Grad. Sch. of Eng., Osaka Univ., 2.SOSHO Inc., 3.Dept. of Chem., Saitama Univ., 4.Grad. Sch. of Sci., Osaka Univ., 5.Grad. Sch. of Life and Environ. Sci., Kyoto Pref. Univ., 6.Grad. Sch. of Biosci. And Biotech., Tokyo Inst. of Tech., 7.Sch. of Life Sci., Ritsumeikan Univ.)

6:15 PM - 6:30 PM

△ [14p-A25-19] Growth of the metastable phase of acetaminophen by using slow-cooling method

〇Kosuke Nii¹, Yoichiro Mori¹, Yoshinori Takahashi^1,2, Mihoko Maruyama¹, Hiroshi Yoshikawa^1,3, Shino Okada², Hiroaki Adachi^1,2, Shigeru Sugiyama⁴, Kazuhumi Takano^2,5, Satoshi Murakami^2,6, Hiroyoshi Matsumura^2,7, Tsuyoshi Inoue^1,2, Katsuo Tsukamoto^1,8, Masashi Yoshimura¹, Yusuke Mori^1,2 (1.Grad. Sch. of Eng., Osaka Univ., 2.SOSHO Inc., 3.Saitama Univ., 4.Grad. Sch. of Sci., Osaka Univ., 5.Kyoto Pref. Univ., 6.Tokyo Inst. of Tech., 7.Ritsumeikan Univ., 8.Tohoku Univ.)

6:30 PM - 6:45 PM

[14p-A25-20] Growth of high-quality AgGaSe₂ single crystal by the flux method (III)

〇Masami Susaki¹ (1.OPUCT)

6:45 PM - 7:00 PM

[14p-A25-21] Observation of Grain- and Sub-grain boundary in Silica Colloidal Crystals

〇yoshimasa ohki¹, yuji nakano¹, satoshi kawanaka¹, hiroki imai¹, fumio uchida¹ (1.Fuji Chemical Co., LTD.)

Poster presentation

[15a-P10-1~1] 15.1 Bulk crystal growth

Thu. Sep 15, 2016 9:30 AM - 11:30 AM P10 (Exhibition Hall)