[14p-A25-1~21] 15.1 Bulk crystal growth

[14p-A25-11] Growth of InGaSb ternary alloys from Ga and Sb faces of GaSb(111) seed under prolonged microgravity at the International Space Station

〇Yasuhiro Hayakawa¹, Velu Nirmal Kumar¹, Mukannan Arivanandhan¹, Koyama Tadanobu¹, Momose Yoshimi¹, Sakata Kaoruho², Ozawa Tetsuo³, Okano Yasunori⁴, Inatomi Yuko² (1.RIE Shizuoka Univ, 2.JAXA, 3.Shizuoka Insti Sci. and Tech, 4.Osaka Univ.)

Keywords:International Space Station, InGaSb ternary alloys, Crystal Orientation

InGaSb crystals were grown from Ga and Sb faces of GaSb(111) under μG condition on board ISS using the sandwiched structures (GaSb(111)/InSb/GaSb(111). The experimental results indicate that the GaSb seed and feed crystals dissolved more along (111)B than (111)A because of the difference in the atomic arrangement of Ga and Sb atoms and their binding with the next atomic layer in their respective planes.The growth rate of InGaSb ternary alloy from GaSb (111)B was greater than that of GaSb (111)A.