[13a-A21-1~10] 15.4 III-V-group nitride crystals

[13a-A21-3] Effect of Graphite Additive Amount and Reaction Temperature on AlN Single Crystal Growth by Carbothermal Reduction of Al₂O₃

〇Makoto Ohtsuka¹, Keigo Fujiwara¹, Hideto Miyake², Hiroyuki Fukuyama¹ (1.Tohoku Univ., 2.Mie Univ.)

Keywords:nitride semiconductor, carbothrmal reduction method, bulk single crystal

Al₂O₃ thermal nitridation method has been proposed as a cheap process of bulk AlN single crystal growth in our group. In this method, Al₂O₃ powders are carbothermal reduced and Al containing gas species is formed. It reacts with N₂ gas on the substrate and forms AlN. In this study, the effect of graphite additive amount and reaction temperature on AlN single crystal growth by carbothermal reduction of Al₂O₃ were investigated.