[13a-A21-1~10] 15.4 III-V-group nitride crystals

[13a-A21-7] New Method on Distributed Strains: Nuclear-Spin Observation of Strains in GaN

Takanori Miura¹, Keisuke Matsumoto¹, Kohsuke Ikeda¹, Masahiro Sakai¹, 〇Susumu Sasaki² (1.Grad. Niigata Univ., 2.Eng. Niigata Univ.)

Keywords:strains, nuclear spin

We propose a new method of detecting strains in semiconductors, where nuclear spins that are built in the material are employed as a probe. Based on the previous success in observing strains in GaAs/AlGaAs superlattices, Ga nuclear spins are going to be used as a probe to detect strains in GaN. In this paper, we clarify that powdered GaN has no strains, contrary to the previous report.