10:15 〜 10:30
▼ [13a-A23-2] Deposition Temperature Dependency of Characteristics of PMnN-PZT Epitaxial Thin Film on Si Prepared by Sputter Deposition with Fast Cooling
キーワード：piezoelectric, thin film, stress
As a high performance piezoelectric thin film for MEMS (Micro Electro Mechanical Systems) sensors, a highly c-axis oriented Pb(Mn1/3, Nb2/3)O3-Pb(Zr, Ti)O3 (PMnN-PZT) epitaxial thin film has been formed on a Si substrate by sputter deposition with fast cooling . This process forcibly suppresses a-domain generation contributing to tensile stress relaxation during the cooling process. In other words, a large tensile stress remains in the c-axis oriented thin film. Such a large tensile stress has a risk to lead crack generation after deposition or during actuation.
The tensile stress reduction will be achieved by lowering the deposition temperature. However, nobody has investigated the dependency of the characteristics of the PMnN-PZT epitaxial thin film on the deposition temperature in detail. On the other hand, Wasa et al. recently published an interesting report that the stress of a fast-cooled PMnN-PZT epitaxial thin films on a SrRuO3(SRO)/Pt/MgO substrate was released by atomic defects at the interface between PMnN-PZT and SRO. It is interesting whether such a stress release mechanism also works for the film on a Si substrate.
In this study, PMnN-PZT epitaxial thin films were deposited by sputtering on SRO/La0.5Sr0.5CoO3/CeO2/yttria-stabilized zirconia/Si substrates at various temperatures. The films were investigated in terms of residual tensile stress, lattice parameters, ferroelectric, dielectric and piezoelectric properties.
The tensile stress reduction will be achieved by lowering the deposition temperature. However, nobody has investigated the dependency of the characteristics of the PMnN-PZT epitaxial thin film on the deposition temperature in detail. On the other hand, Wasa et al. recently published an interesting report that the stress of a fast-cooled PMnN-PZT epitaxial thin films on a SrRuO3(SRO)/Pt/MgO substrate was released by atomic defects at the interface between PMnN-PZT and SRO. It is interesting whether such a stress release mechanism also works for the film on a Si substrate.
In this study, PMnN-PZT epitaxial thin films were deposited by sputtering on SRO/La0.5Sr0.5CoO3/CeO2/yttria-stabilized zirconia/Si substrates at various temperatures. The films were investigated in terms of residual tensile stress, lattice parameters, ferroelectric, dielectric and piezoelectric properties.