2016年 第77回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

6 薄膜・表面 » 6.1 強誘電体薄膜

[13a-A23-1~7] 6.1 強誘電体薄膜

2016年9月13日(火) 10:00 〜 11:45 A23 (201B)

寒川 雅之(新潟大)

11:00 〜 11:15

[13a-A23-5] Compositional dependence of BaTiO3-xBaSnO3 piezoelectric thin films prepared by combinatorial sputtering

Hongbo Cheng1,2、〇Takuya Teramoto1、Hirotaka Hida1、Isaku Kanno1、Jun Ouyang2 (1.Kobe Univ.、2.Shandong Univ.)

キーワード:piezoelectric, thin film, MEMS

Investigation of lead-free piezoelectric thin films has been of great importance to realize environmental-friendly piezoelectric MEMS. One of the promising lead-free piezoelectric materials is (1−x)BaTiO3–xBaSnO3 (BT-xBS) solid solution whose piezoelectric coefficient (d33) is as high as 425 pC/N. In this study, we tried to deposit BT-xBS thin films on Si substrates and examine the compositional dependence of piezoelectric properties.