[13a-A25-1~11] 7.4 Buried interface sciences with quantum beam

[13a-A25-3] Crystal orientation of bismuth titanate thin films formed on Si(100) substrates

〇Atsushi Kohno¹, Takayuki Tajiri¹ (1.Fukuoka Univ.)

Keywords:ferroelectric thin film, X-ray reflectivity method, ferroelectric transistor-type memory

It was found that highly-preferential crystal orientation arose in Bi_4-xLa_xTi₃O₁₂ (BLT) thin films formed on Si(100) substrates with chemical solution deposition method. We developed the chemical process for controlling thickness of BLT thin film, and investigated the thickness dependence of orientation, lattice constant, and interface layer thickness with X-ray reflectivity and diffraction methods. In this presentation the formation of preferred orientation of BLT on Si will be discussed.