The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[13a-A31-1~11] 6.3 Oxide electronics

Tue. Sep 13, 2016 9:00 AM - 11:45 AM A31 (302A)

Takayoshi Katase(Hokkaido Univ.)

9:00 AM - 9:15 AM

[13a-A31-1] Growth of Vanadium oxide film on Ag(100)

Yuichi Sugizaki1, Hiroki Motoyama1, Kazuyuki Edamoto1 (1.Rikkyo Univ.)

Keywords:Vanadium Oxide, thin film

It is a most famous strong correlation metal oxide system. Among vanadium oxide, we try to prepare the VO which haven't been prepared as a single-crystal.
Thus, we prepare and estimate VO on Ag(100).
The VO is prepared by V deposition in O2 atomosphere (3.7x10-9 Torr). After deposition, sample is annealed at 450 degree for 30 minutes in UHV condition.
As a result, vanadium oxide which has a coincident periodicity pattern respect to a (1x1) Ag(100) is prepared. And we perform Near Edge X-ray Absorption Fine Structure (NEXAFS) and Angle Resolved PhotoElectron Spectroscopy (ARPES) for this sample.
The result of NEXAFS shows this vanadium oxide is stoichiometrical VO.
And the result of ARPES shows this sample is metalic compound.