Oral presentation

[13a-A31-1~11] 6.3 Oxide electronics

Tue. Sep 13, 2016 9:00 AM - 11:45 AM A31 (302A)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[13a-A31-1] Growth of Vanadium oxide film on Ag(100)

〇Yuichi Sugizaki¹, Hiroki Motoyama¹, Kazuyuki Edamoto¹ (1.Rikkyo Univ.)

9:15 AM - 9:30 AM

[13a-A31-2] Strain-induced resistance change in a V₂O₃ film transferred on a piezoelectric device

〇Joe Sakai¹, Beatrice Negulescu¹, Maxime Bavencoffe¹, Patrice Limelette¹, Jerome Wolfman¹, Hiroshi Funakubo² (1.GREMAN, Univ. Tours, 2.Tokyo Tech.)

9:30 AM - 9:45 AM

[13a-A31-3] Characterization of VO2 film domains by helium ion microscope (HIM) at controlled temperatures and voltage

〇Shinichi Ogawa¹, Tomohiko Iijima¹, Teruo Kanki², Hidekazu Tanaka² (1.AIST, 2.Osaka Univ.)

9:45 AM - 10:00 AM

[13a-A31-4] Growth of VO₂ thin films on ZnO/glass by reactive sputtering method and their properties

〇Kenta Sato¹, Hiroaki Hoshino¹, Md. Suruz Mian¹, Kunio Okimura¹ (1.Tokai Univ.)

10:00 AM - 10:15 AM

[13a-A31-5] Formation of Separate Phonon by Local Impurity Doping to VO₂ Thin Films

〇Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

10:15 AM - 10:30 AM

[13a-A31-6] Local characterization of resistive switching in TaO_x thin films with a highly uniform structure

〇Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Takayoshi Katase², Hiromichi Ohta², Yasuo Takahashi¹ (1.IST, Hokkaido Univ., 2.RIES, Hokkaido Univ.)

10:30 AM - 10:45 AM

[13a-A31-7] Relationship between Microstructure and Conductance Quantization in Resistive Switching in TaO_x Thin Films.

〇Tadashi Shiota¹, Tomoya Kubo¹, Akio Nishiyama¹, Osamu Sakuria¹, Kazuo Shinozaki¹ (1.Tokyo Tech.)

10:45 AM - 11:00 AM

[13a-A31-8] Investigation on controllability of oxygen vacancies in BaTiO₃ thin film for ReRAM by N₂ atmosphere annealing

〇Sou Maejima¹, Toshiyuki Sugie¹, Kaoru Yamashita¹, Minoru Noda¹ (1.Kyoto Inst. Tech)

11:00 AM - 11:15 AM

[13a-A31-9] Theoretical Study of Resistive Switching Mechanism for Polycrystalline Transition Metal Oxides

〇(D)Takumi Moriyama¹, Takahiro Yamasaki², Sohta Hida¹, Takahisa Ohno², Satoru Kishida^1,3, Kentaro Kinoshita^1,3 (1.Tottori Univ., 2.NIMS, 3.TiFREC)

11:15 AM - 11:30 AM

[13a-A31-10] The appearance of quantum point contact in Pt/NiO/Pt stack structures

〇Yusuke Nishi¹, Hiroki Sasakura¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

11:30 AM - 11:45 AM

[13a-A31-11] The impact of metal-doped ionic liquid addition on the performance of conducting-bridge memory

〇Atsushi Sakaguchi¹, Hiroki Yamaoka¹, Toshiyuki Itoh¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (1.Tottori Univ., 2.TiFREC.)

Oral presentation

[14a-A31-1~10] 6.3 Oxide electronics

Wed. Sep 14, 2016 9:30 AM - 12:00 PM A31 (302A)

Takeaki Yajima(Univ. of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[14a-A31-1] Production of Fe₃O₄thin films on thermally-oxidized-Si substrates by rapid thermal deoxidation method and their magneto-conductive properties

〇Akihisa Fujita¹, Hiromi Kobori¹, Atsushi Yamasaki¹, Toshifumi Taniguchi², Tetsuo Shimizu³ (1.Konan Univ., 2.Osaka Univ., 3.NRI-AIST)

9:45 AM - 10:00 AM

[14a-A31-2] Magnetic properties controlled in rare-earth iron garnet thin film heterostructure

〇Hiroyasu Yamahara¹, Keita Mitsuhashi¹, Tetsuya Murata¹, Munetoshi Seki¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

10:00 AM - 10:15 AM

[14a-A31-3] Magnetic and Dielectric Properties in Multiferroic Ga_xFe₂₋_xO₃ Films

〇Tsukasa Katayama¹, Yousuke Hamasaki¹, Shintaro Yasui¹, Mitsuru Itoh¹ (1.Tokyo Tech. MSL)

10:15 AM - 10:30 AM

[14a-A31-4] Ferromagnetic Curie temperature of Sr_1-xBa_xCoO_3-δthin films

〇Yuki Suzuki¹, Takayoshi Katase², Hiromichi Ohta² (1.IST-Hokkaido Univ., 2.RIES-Hokkaido Univ.)

10:30 AM - 10:45 AM

[14a-A31-5] Thermopower of Ultrathin Mott Insulator Films

〇Takaki Onozato¹, Takayoshi Katase², Yuqiao Zhang¹, Tetsuya Tohei³, Feng Bin³, Yuichi Ikuhara³, Hiromichi Ohta² (1.IST-Hokkaido Univ., 2.RIES-Hokkaido Univ., 3.Univ. Tokyo)

10:45 AM - 11:00 AM

[14a-A31-6] Metal insulator transition in SrVO₃/SrTiO₃ superlattice structure

〇Yumiko Katayama¹, Yohei Sato¹, Kazunori Ueno¹ (1.UTokyo)

11:00 AM - 11:15 AM

[14a-A31-7] Enhancement electron mobility of Nb-doped SrTiO₃ film with a strain field induced by defect structures

〇Shunsuke Kobayashi¹, Tsuyoshi Ohnishi², Naoya Shibata³, Yuichi Ikuhara^1,3, Takahisa Yamamoto^1,4 (1.JFCC, 2.NIMS, 3.Univ. Tokyo, 4.Nagoya Univ.)

11:15 AM - 11:30 AM

[14a-A31-8] Fabrication and characterization of EuNbO₃ thin films by pulsed laser deposition

〇Takahiro Maruyama¹, Akira Chikamatsu¹, Tomoya Onozuka¹, Keisuke Yamada¹, Tetsuya Hasegawa^1,2 (1.Univ. of Tokyo, 2.KAST)

11:30 AM - 11:45 AM

[14a-A31-9] Growth and physical properties of La₂CrMnO₆double-perovskite films

〇Junya Ishimaru¹, Kohei Yoshimatsu¹, Koji Horiba², Hiroshi kumigashira^2,3, Akira Ohtomo^1,3 (1.Tokyo tech. Chem. Sci. Eng, 2.KEK-PF, 3.MCES)

11:45 AM - 12:00 PM

[14a-A31-10] Interface effects on microwave absorption at metal/oxide heterojunction

〇yuka sato¹, Masato Maitani², Shuntaro Tsubaki¹, Eiichi Suzuki¹, Yuji Wada¹ (1.Tokyo Tech., 2.The Univ. Tokyo)

Oral presentation

[14p-A31-1~16] 6.3 Oxide electronics

Wed. Sep 14, 2016 1:30 PM - 5:45 PM A31 (302A)

Kouhei Yoshimatsu(Titech), Yuji Muraoka(Okayama Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[14p-A31-1] Rational Concept for Reducing Growth Temperature in Vapor-Liquid-Solid Process of Metal Oxide Nanowires

Zhu Zetao¹, Kazuki Nagashima¹, Masaru Suzuki¹, Masaki Kanai¹, 〇Takeshi Yanagida¹ (1.Kyushu Univ.)

1:45 PM - 2:00 PM

△ [14p-A31-2] High rate deposition of n-type and p-type SnOx films deposited by reactive sputtering with impedance control systems

〇Takumi Sugane¹, Junjun Jia¹, Shinichi Nakamura¹, Gloess Daniel², Yuzo Shigesato¹ (1.Aoyama-Gakuin Univ., 2.FEP)

2:00 PM - 2:15 PM

△ [14p-A31-3] Decomposition of Contamination by Titanium Dioxide in Vacuum for Contamination Removal of Spacecraft

〇(DC)Naoki Shimosako¹, Kazunori Shimazaki², Eiji Miyazaki², Hiroshi Sakama¹ (1.Sophia Univ., 2.JAXA)

2:15 PM - 2:30 PM

△ [14p-A31-4] Tailoring the crystal structure of TiO₂ films deposited by reactive sputtering (1);
Selective rutile growth by controlling the sputtering parameters or Sn-doping

〇(M1)Haruka Yamamoto¹, Junjun Jia¹, Haruka Kotake¹, Shin-ichi Nakamura¹, Toshihiro Okajima², Masaaki Imura³, Toshimasa Kanai³, Yozo Shigesato¹ (1.Aoyama Gakuin Univ., 2.Kyushu Synchrotron Light Research Center, 3.Nippon Electric Glass Co., Ltd)

2:30 PM - 2:45 PM

[14p-A31-5] Tailoring the crystal structure of TiO₂ films deposited by reactive sputtering (2);
Selective anatase growth by Nb or N dopings

〇Hiroyoshi Nishiyama¹, Junjun Jia¹, Shin-ichi Nakamura¹, Toshihiro Okajima², Masaaki Imura³, Toshimasa Kanai³, Yuzo Shigesato¹ (1.Aoyama Gakuin Univ, 2.kyushu Synchrotron Light Research Center, 3.Nippon Electric Glass Co., Ltd.)

2:45 PM - 3:00 PM

△ [14p-A31-6] TiO₂/WO₃ multi-layer Films Deposited by reactive Sputtering for Visible Light-active Photocatalyst

〇Kenta Taniyama¹, Nanami Miyazawa¹, Junjun Jia¹, Masaaki Imura², Toshimasa Kanai², Yuzo Shigesato¹ (1.Aoyama-Gakuin Univ., 2.Nippon Electric Glass)

3:00 PM - 3:15 PM

△ [14p-A31-7] Reversible resistive switching by the control of oxygen vacancy distribution in rutile TiO₂ single crystals

〇(M1)Takuma Shimizu¹, Shotaro Takeuchi¹, Akira Sakai¹ (1.Grad. Sch, Osaka Univ.)

3:15 PM - 3:30 PM

△ [14p-A31-8] Electrochemical characterizations of an ionic liquid/anatase TiO₂ interface

〇Mariko Kanai¹, Shingo Maruyama¹, Yuji Matsumoto¹ (1.Tohoku Univ.)

3:45 PM - 4:00 PM

△ [14p-A31-9] Ag₂S atomic switch based Tug of War devices for neuromorphic networks

〇(D)Carolin Lutz^1,2, Tsuyoshi Hasegawa¹, Toyohiro Chikyow² (1.Waseda University, 2.NIMS)

4:00 PM - 4:15 PM

[14p-A31-10] Formation of a space-charge layer at Li₃PO₄/Li(Ni_0.5Mn_1.5)O₄ interface

〇Hideyuki Kawasoko¹, Susumu Shiraki¹, Tetsuro Shirasawa², Toru Suzuki¹, Taro Hitosugi^1,3 (1.Tohoku Univ., 2.AIST, 3.Tokyo Tech.)

4:15 PM - 4:30 PM

△ [14p-A31-11] Ultrafast charging in Li(Ni_0.5Mn_1.5)O₄ solid-state batteries

〇Hideyuki Kawasoko¹, Shiraki Susumu¹, Toru Suzuki¹, Ryota Shimizu², Taro Hitosugi^1,2 (1.Tohoku Univ., 2.Tokyo Tech.)

4:30 PM - 4:45 PM

△ [14p-A31-12] Measurement of Li distribution in solid electrolyte using neutron reflectivity and nuclear reaction analysis

〇Issei Sugiyama¹, Masahiro Saito², Noboru Miyata³, Takayasu Hanashima³, Kazuhiro Akutsu³, Yasuhito Aoki², Yuji Otsuka², Masayasu Takeda⁴, Ryota Shimizu¹, Taro Hitosugi^1,5 (1.Tokyo Inst. Tech., 2.Toray Research Center, 3.CROSS Tokai, 4.JAEA, 5.Tohoku Univ.)

4:45 PM - 5:00 PM

▼ [14p-A31-13] Growth of Crystalline BaSi₂ Thin Films by Vacuum Evaporation on Poly-Crystalline Silicon Fabricated by Aluminum Induced Crystallization

〇(M2)Jefferson Adrian WIBOWO¹, Yoshihiko NAKAGAWA¹, Isao TAKAHASHI¹, Kosuke O. HARA², Noritaka USAMI¹ (1.Nagoya Univ., 2.Univ. of Yamanashi)

5:00 PM - 5:15 PM

△ [14p-A31-14] Intrinsic Half-metallicity of CrO₂ Revealed by Bulk-sensitive Spin-resolved Photoemission Spectroscopy

〇Hirokazu Fujiwara¹, Masanori Sunagawa¹, Kensei Terashima², Tomoko Kittaka¹, Makoto Ogata¹, Takanori Wakita², Yuji Muraoka^1,2, Takayoshi Yokoya^1,2 (1.Okayama Univ., 2.Research Inst. for Interdisciplinary Science, Okayama Univ.)

5:15 PM - 5:30 PM

[14p-A31-15] Metallic Surface States of CrO₂ (001) Films Observed by Depth-resolved Photoemission Spectroscopy

〇Hirokazu Fujiwara¹, Masanori Sunagawa¹, Tomoko Kittaka¹, Takanori Wakita², Kensei Terashima², Takanobu Nagayama¹, Makoto Ogata¹, Yuka Matsuura¹, Fumiya Yoshii¹, Shin-ichiro Ideta³, Kiyohisa Tanaka³, Yuji Muraoka^1,2, Takayoshi Yokoya^1,2 (1.Okayama Univ., 2.Research Inst. for Interdisciplinary Science, Okayama Univ., 3.UVSOR)

5:30 PM - 5:45 PM

△ [14p-A31-16] Electric Field Modulation of Anomalous and Topological Hall Effects in SrIrO₃ / SrRuO₃Heterostructures

〇(D)Yuki Ohuchi¹, Jobu Matsuno², Naoki Ogawa², Yusuke Kozuka¹, Masaki Uchida¹, Yoshinori Tokura^1,2, Masashi Kawasaki^1,2 (1.Dept. of Appl. Phys.,the Univ. of Tokyo, 2.RIKEN CEMS)

Oral presentation

[15a-A31-1~13] 6.3 Oxide electronics

Thu. Sep 15, 2016 9:00 AM - 12:15 PM A31 (302A)

Makoto Minohara(KEK)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[15a-A31-1] Fabrication and characterization of ZnO thin film on different substrates by RF sputtering

〇Kentaro Imoto¹, Shengwen Hou¹, Chaoyang Li^1,2 (1.Kochi Univ. Tech, 2.Nanotechnology Center)

9:15 AM - 9:30 AM

[15a-A31-2] Niobium Oxide film deposited by reactive sputtering with plasma emission feedback system

〇Mai Saito¹, Junjun Jia¹, Shinichi Nakamura¹, Gloess Daniel², Yuzo Shigesato¹ (1.Aoyama-Gakuin Univ., 2.FEP)

9:30 AM - 9:45 AM

[15a-A31-3] Study on high performance TCO/Ag/TCO multilayer film

〇Hiromi Nakazawa¹, Hiroshi Ishii¹, Yuto Toshimori¹, Atsushi Saito¹ (1.Mitsubishi Materials Corp.)

9:45 AM - 10:00 AM

[15a-A31-4] Electrical property of (111)(Ba,La)SnO₃ epitaxial films

〇Kohei Miura¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

10:00 AM - 10:15 AM

[15a-A31-5] Observations of intra-gap states and estimations of bandgap on NiMgO thin films

〇Kazutoshi Kinoshita¹, Hiroki Nishitani¹, Tomohiko Nishida¹, Shoso Shingubara¹, Mitsuru Inada¹, tadashi Saitoh¹ (1.Kansai Univ.)

10:15 AM - 10:30 AM

[15a-A31-6] Preparation of thin films of transparent p-type semiconductor NiO_x by electrochemical deposition

〇BAYINGAERDI TONG¹, MASAYA ICHIMURA¹ (1.NIT.)

10:30 AM - 10:45 AM

[15a-A31-7] Optoelectronic characterization of electrochemically deposited Cu₂O thin-films

〇(DC)Yuki Takiguchi¹, Aoi Orisaka², Shinsuke Miyajima² (1.Dept. of Physical Electronics, Tokyo Tech., 2.Dept. of Electrical and Electronic Engineering, Tokyo Tech.)

10:45 AM - 11:00 AM

[15a-A31-8] Fabrication and Characterization of Cu₂O Thin Film Deposited by Facing
Target Sputtering

〇Hikaru Watanabe¹, Yutaro Takei², Yuki Takiguchi², Shinsuke Miyajima¹ (1.Dept. of Electrical and Electronic Eng., 2.Dept.of Phy. Elec., Tokyo Tech.)

11:00 AM - 11:15 AM

[15a-A31-9] Fabrication of AZO/n-type Zn_1-XGe_X-O/p-type Cu₂O:Na heterojunction solar cells

〇Toshihiro Miyata¹, Jouji Yamazaki¹, Kyosuke Watanabe¹, Tadatsugu Minami¹ (1.Kanazawa I.T.)

11:15 AM - 11:30 AM

[15a-A31-10] Photovoltalic properties of homojunction Cu₂O solar cells with an epitaxially grown Cu₂O thin film active layer by electrochemical deposition

〇Toshihiro Miyata¹, Jouji Yamazawa¹, Kyosuke Watanabe¹, Tadatsugu Minami¹ (1.Kanazawa I. T.)

11:30 AM - 11:45 AM

[15a-A31-11] Fabrication and Evaluation of Dye Sensitized Solar Cell with Negative Electrode of Semiconductor Deposited Using Electrophoresis

〇Sakika Ogura¹ (1.Doshisha Univ.)

11:45 AM - 12:00 PM

[15a-A31-12] Effects of SiO₂ and TiO₂ combination coating on
photoelectrodes in dye sensitized solar cells.

〇Kensaku Kanomata^1,2, Yuki Kato¹, Takahiro Imai¹, Masanori Miura¹, Bashir Ahmmad^1,2, Shigeru Kubota^1,2, Fumihiko Hirose^1,2 (1.Yamagata Univ., 2.CREST)

12:00 PM - 12:15 PM

[15a-A31-13] Growth of V-substituted Fe₂O₃ Epitaxial Thin Films and Photoelectrochemical Properties

Ameya Sathe¹, Takeshi Ishida¹, 〇Munetoshi Seki¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

Oral presentation

[16a-A31-1~9] 6.3 Oxide electronics

Fri. Sep 16, 2016 9:30 AM - 11:45 AM A31 (302A)

Susumu Shiraki(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[16a-A31-1] First Principles Determination of cubic Li₇La₃Zr₂O₁₂/amorphous Li₃BO₃Composite Electrolyte Interface and the Analysis of Li Inter Diffusion across this interface

〇Minoru Ikeda¹, Takahisa Ohno^1,2 (1.NIMS MANA, 2.NIMS GREEN)

9:45 AM - 10:00 AM

[16a-A31-2] Two-dimensional Simulation of All-solid-state Li-ion Batteries

〇LIZHU TONG¹ (1.Keisoku Eng. Sys.)

10:00 AM - 10:15 AM

[16a-A31-3] Permittivity Measurements of Thin Films of Solid-State-Li⁺ Electrolytes by AM-AFM

〇Kenji Kimura¹, Munekazu Motoyama¹, Yasutoshi Iriyama¹ (1.Nagoya Univ.)

10:15 AM - 10:30 AM

[16a-A31-4] SrTiO₃ double layer transistor with solid state Li-ion electrolyte

〇Yohei Sato¹, Tsuyoshi Ohnishi², Kazunori Ueno¹ (1.Univ. Tokyo, 2.NIMS)

10:30 AM - 10:45 AM

[16a-A31-5] EXAFS analysis of solid solution of layered oxides

〇(M2)Shota Akama¹, Kaoru Amaha¹, Wataru Kobayashi^1,2,3, Hideharu Niwa^1,2,3, Yutaka Moritomo^1,2,3 (1.Grad. Sch. Pure and Appl. Sci., Univ. Tsukuba, 2.Fac. Pure and Appl. Sci., Univ. Tsukuba, 3.CiRfSE)

10:45 AM - 11:00 AM

[16a-A31-6] Structure-related battery properties in O3-type NaFe_0.5Co_0.5O₂

〇(M1)Kaoru Amaha¹, Yutaka Moritomo^1,2,3, Wataru Kobayasi^1,2,3 (1.Grad. Sch. Pure and Appl., Univ. Tukuba, 2.Fac. Pure and Appl. Sci., Univ. Tsukuba, 3.CiRfSE, Univ. Tsukuba)

11:00 AM - 11:15 AM

[16a-A31-7] Hydrostatic pressure effect on battery voltage in layered NaMO₂

〇Wataru Kobayashi^1,2,3, Shinji Iouno², Kaoru Amaha², Shota Akama², Yutaka Moritomo^1,2,3 (1.Fac. Pure and Appl. Sci., Univ. Tsukuba, 2.Grad. Sch. Pure and Appl. Sci., Univ. Tsukuba, 3.CiRfSE, Univ. Tsukuba)

11:15 AM - 11:30 AM

[16a-A31-8] Rutile-type TiO₂ as a potential anode for Na-ion battery

〇Hiroyuki Usui^1,2, Sho Yoshioka^1,2, Yasuhiro Domi^1,2, Hiroki Sakaguchi^1,2 (1.Graduate School of Eng., Tottori Univ., 2.Center for Research on GSC, Tottori Univ.)

11:30 AM - 11:45 AM

[16a-A31-9] Application of high-conductivity and high-corrosion-resistance oxide thin films for metal separator of fuel cells

〇Kentaro Kaneko¹, Ryosuke Takagi¹, Takashi Tanaka², Toshimi Hitora³, Shizuo Fujita¹ (1.Kyoto Univ., 2.EYETEC CO., LTD., 3.FLOSFIA INC.)

Poster presentation

[15p-P3-1~32] 6.3 Oxide electronics

Thu. Sep 15, 2016 1:30 PM - 3:30 PM P3 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[15p-P3-1] Simulation analysis of photoconductivity of SrTiO₃

〇Naoyuki Osawa¹, Ryota Takahashi¹, Mikk Lippmaa¹ (1.ISSP, Univ. of Tokyo)

1:30 PM - 3:30 PM

[15p-P3-2] Magnetotransport at LaTiO₃/SrTiO₃ interfaces

〇(M2)JIYEON LEE¹, Ryota Takahashi¹, Mikk Lippmaa¹ (1.ISSP, Univ. of Tokyo)

1:30 PM - 3:30 PM

▲ [15p-P3-3] Hidden Electronic Phase Boundary in the SrTiO₃−SrNbO₃ Solid-solution System

〇(B)Yuqiao Zhang¹, Takayoshi Katase¹, Takaki Onozato¹, Bin Feng², Hiroyuki Hayashi³, Tetsuya Tohei², Isao Tanaka³, Yuichi Ikuhara², Hiromichi Ohta¹ (1.Hokkaido Univ., 2.Univ. Tokyo, 3.Kyoto Univ.)

1:30 PM - 3:30 PM

[15p-P3-4] Post annealing effect of homoepitaxial SrTiO₃ films by pulsed laser deposition using fourth harmonic Nd:YAG pulsed laser

〇Takumi Fujiwara¹, Takumi Onodera¹, Motonori Nakamura¹, Ken'ichi Yoshimoto¹, Koji Takamura¹ (1.NIT, Asahikawa College)

1:30 PM - 3:30 PM

[15p-P3-5] Ferroelectric properties of BaTiO₃/Sr₂RuO₄ heterostructures

〇Ryota Takahashi¹, Mikk Lippmaa¹ (1.ISSP, Univ. Tokyo)

1:30 PM - 3:30 PM

[15p-P3-6] Topotactic Synthesis of A-site Cation Ordered Perovskite YBaCo₂O₆ Epitaxial Thin Film, Exhibiting Huge Magnetic Anistropy and Spin State Transition

〇Tsukasa Katayama¹, Akira Chikamatsu², Yasushi Hirose^2,3, Makoto Minohara⁴, Hiroshi Kumigashira⁴, Isao Harayama⁵, Daiichiro Sekiba⁵, Tetsuya Hasegawa^2,3 (1.Tokyo Tech. MSL, 2.Univ. of Tokyo, 3.KAST, 4.KEK, 5.Univ. of Tsukuba)

1:30 PM - 3:30 PM

[15p-P3-7] Fabrication of electric-field effect transistor with (La,Pr,Ca)MnO₃ nanowall wire channel

〇Hisoka Nakazawa¹, Azusa Hattori^1,2, Mahito Yamamoto¹, Hidekazu Tanaka¹ (1.ISIR, Osaka Univ., 2.JST-PRESTO)

1:30 PM - 3:30 PM

[15p-P3-8] Ultrasmall electric power-driven electronic phase switching in VO₂ freestanding nanowires

〇Yoshiyuki Higuchi¹, Teruo Kanki¹, Luca Pellegrino², Nicola Manca⁴, Daniele Marre^2,3, Hidekazu Tanaka¹ (1.ISIR, Osaka Univ., 2.CNR-SPIN, 3.Genova Univ., 4.Delft Univ. of Tech.)

1:30 PM - 3:30 PM

[15p-P3-9] Metal-insulator Transition and Electronic Structure of Valence-Controlled VO2 Thin Film

〇Tomohiro Tanno¹, Takashi Tsuchiya², Masaki Kobayashi³, Makoto Minohara³, Koji Horiba³, Hiroshi Kumigashira³, Toru Higuchi¹ (1.Tokyo Univ. Sci, 2.NIMS, 3.PF. KEK)

1:30 PM - 3:30 PM

[15p-P3-10] Electronic Structure and Electrical Resistivity of V₆O₁₃ Thin Film Prepared by RF Magnetron Sputtering

Atsushi Takahashi¹, Tomohiro Tanno¹, Masaki Kobayashi², Makoto Minohara², Koji Horiba², Hiroshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.KEK, PF)

1:30 PM - 3:30 PM

[15p-P3-11] Development of Ta₂O₅-based gap-type atomic switch (1)

〇Tsutomu Tanaka¹, Ilia Valov², Tsuyoshi Hasegawa¹ (1.Waseda Univ., 2.RWTH Aachen)

1:30 PM - 3:30 PM

[15p-P3-12] Dependence of on-resistance of an Ag/Ta₂O₅/Pt device on its switching-on bias

〇(B)Yuya Ishikawa¹, Ai Kassai¹, Ayana Suzuki¹, Tohru Tsuruoka², Tsuyoshi Hasegawa¹ (1.Waseda Univ., 2.NIMS)

1:30 PM - 3:30 PM

[15p-P3-13] Dependence of switching bias of an Ag/Ta₂O₅/Pt device on its Ta₂O₅ thickness

〇(B)Naoya Tanahashi¹, Yuuki Shigeoka¹, Tohru Tsuruoka², Tsuyoshi Hasegawa¹ (1.Waseda Univ., 2.NIMS)

1:30 PM - 3:30 PM

[15p-P3-14] Quantized Conductance Observed in a Conductive Filament Formed in Tantalum Oxide

〇Shota Kawashima¹, Tohru Tsuruoka², Tsuyoshi Hasegawa¹ (1.Waseda Univ., 2.NIMS)

1:30 PM - 3:30 PM

[15p-P3-15] Formative Mechanism of Conducting Path in Resistive Random Access Memory
~ Electric contact method dependence of Conducting Path Formation ~

〇(B)Sohta Hida¹, Takahiro Yamasaki², Takumi Moriyama¹, Takahisa Ohno², Michiko Yoshitake², Satoru Kishida^1,3, Kentaro Kinoshita^1,3 (1.Tottori Univ., 2.NIMS, 3.TiFREC)

1:30 PM - 3:30 PM

[15p-P3-16] Diffuse ion species and memory layer material dependences on the reliability of resistive random access memories

〇Shinya Tanaka¹, Kentaro Kinoshita^1,2, Satoru Kishida^1,2 (1.Tottori Univ., 2.Tottori Integrated Frontier Research Center)

1:30 PM - 3:30 PM

[15p-P3-17] Correlation between Parameters of Absorbed Solution into Memory Layer and Resistive Switching Properties

〇(M2)Koki Kawano¹, Katsuyuki Ochiai¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (1.Tottori Univ., 2.TiFREC)

1:30 PM - 3:30 PM

[15p-P3-18] Origin of interface resistance at solid-electrolyte and electrode interface

〇Susumu Shiraki¹, Tetsuroh Shirasawa², Toru Suzuki¹, Hideyuki Kawasoko¹, Ryota Shimizu³, Taro Hitosugi^1,3 (1.AIMR, Tohoku Univ., 2.AIST, 3.Tokyo Tech)

1:30 PM - 3:30 PM

[15p-P3-19] Interface condition of BaTiO₃/LiCoO₂ epitaxial thin films and their cathode property

〇Sou Yasuhara¹, Keisuke Chajima², Takashi Teranishi², Yoshio Katsuya³, Osami Sakata³, Shintaro Yasui¹, Tomoyasu Taniyama¹, Mitsuru Itoh¹ (1.Tokyo Institute of Technology, 2.Okayama University, 3.NIMS/SPring-8)

1:30 PM - 3:30 PM

[15p-P3-20] Fabrication of 3D structured rechargeable battery by electrochemical deposition of
conducting polymer on inner surface of a mesoporous TiO₂ film

〇(M2)Ryoichi Arima¹, Nakamura Keita¹, Nomiyama Teruaki¹, Horie Yuji¹ (1.Kagoshima Univ)

1:30 PM - 3:30 PM

[15p-P3-21] Cu2O/ZnO heterojunction solar cells prepared by electrochemical deposition and their application to photorechargeable battery

〇Takeru Saisho¹, Daiki Maeda¹, Teruaki Nomiyama¹, Yuji Horie¹ (1.Kagoshima Univ.)

1:30 PM - 3:30 PM

[15p-P3-22] Application of TiO₂ nanoparticles/WO₃ core-sheath nanofibers to photorechargeable battery electrode

〇Ko Chishiki¹ (1.Kagoshima Univ.)

1:30 PM - 3:30 PM

[15p-P3-23] Preparation of TiO₂ nanotubes/palladium bilayer membrane and its characterization on photoinduced hydrogen generation and concurrent purification

〇(M1)JUNKI ASAI¹, NODA KEI¹ (1.Keio Univ.)

1:30 PM - 3:30 PM

[15p-P3-24] Fabrication of TiO₂ films using sol-gel method and application to dye-sensitized solar cells

〇(M1)Katsuya Wada¹, Naoki Ohtani¹ (1.Doshisha Univ.)

1:30 PM - 3:30 PM

[15p-P3-25] Formation of TiO₂ films by the thermal oxidization of titanium films deposited by a glancing angle deposition

〇Yoji Yasuda¹, Yoichi Hoshi² (1.Kanagawa Prefectural Junior College for Industrial Technology, 2.Tokyo Polytechnic Univ.)

1:30 PM - 3:30 PM

[15p-P3-26] Fabrication of visible-light-transparent H₂ and CO2 sensor
using wide bandgap oxide semiconductors

〇Ryo Tanuma¹, Hiroshi Nakai¹, Ryota Nakazato¹, Mutsumi Sugiyama¹ (1.Faculty of Sci. & Tech. / RIST, Tokyo Univ. of Sci.)

1:30 PM - 3:30 PM

[15p-P3-27] Fabrication of ZnO Films with Molecular Precursor Solution by ESD Method

〇(M1)Ryuhei Ozawa¹, Yukihiro Kudoh¹, Hiroki Nagai¹, Mitsunobu Sato¹, Taiju Takahashi¹ (1.Kogakuin Univ.)

1:30 PM - 3:30 PM

[15p-P3-28] Characterization of Dopant Density Dependence on Transmittance and Resistance of Multilayer ZnO Films Fabricated Using Spin-coating Method

〇Yusuke Morita¹, Ohtani Naoki¹ (1.Doshisha Univ.)

1:30 PM - 3:30 PM

[15p-P3-29] Control of crystalline orientations of ZnO thin films by rf biased reactive sputtering

〇Kazuki Yuzurihara¹, Kunio Okimura¹ (1.Tokai Univ.)

1:30 PM - 3:30 PM

[15p-P3-30] Electrical and optical properties of NbO₂ films grown by solid phase crystallization

〇Shoichiro Nakao¹, Hideyuki Kamisaka², Yasushi Hirose^1,2, Tetsuya Hasegawa^1,2 (1.KAST, 2.The Unvi. of Tokyo)

1:30 PM - 3:30 PM

[15p-P3-31] Fabrication of NiO:Li thin films for transparent solar cells

〇kazuya satou¹, hirofumi naganuma¹, syuuji komuro², xinwei zhao¹ (1.Tokyo univ of sci., 2.Toyo univ.)

1:30 PM - 3:30 PM

[15p-P3-32] Preparation and Application on Metal, Semiconductor Nanoparticle Dispersion SiO₂

〇Hirotomo Demura¹, Alexander Ulyashin², Hiroshi Nagaryoshi¹ (1.NIT, Tokyo, 2.SINTEF)

Sessions

6 Thin Films and Surfaces » 6.3 Oxide electronics

[13a-A31-1~11] 6.3 Oxide electronics

[14a-A31-1~10] 6.3 Oxide electronics

[14p-A31-1~16] 6.3 Oxide electronics

△ [14p-A31-2] High rate deposition of n-type and p-type SnOx films deposited by reactive sputtering with impedance control systems

△ [14p-A31-3] Decomposition of Contamination by Titanium Dioxide in Vacuum for Contamination Removal of Spacecraft

△ [14p-A31-4] Tailoring the crystal structure of TiO2 films deposited by reactive sputtering (1);Selective rutile growth by controlling the sputtering parameters or Sn-doping

△ [14p-A31-6] TiO2/WO3 multi-layer Films Deposited by reactive Sputtering for Visible Light-active Photocatalyst

△ [14p-A31-7] Reversible resistive switching by the control of oxygen vacancy distribution in rutile TiO2 single crystals

△ [14p-A31-8] Electrochemical characterizations of an ionic liquid/anatase TiO2 interface

△ [14p-A31-9] Ag2S atomic switch based Tug of War devices for neuromorphic networks

△ [14p-A31-11] Ultrafast charging in Li(Ni0.5Mn1.5)O4 solid-state batteries

△ [14p-A31-12] Measurement of Li distribution in solid electrolyte using neutron reflectivity and nuclear reaction analysis

▼ [14p-A31-13] Growth of Crystalline BaSi2 Thin Films by Vacuum Evaporation on Poly-Crystalline Silicon Fabricated by Aluminum Induced Crystallization

△ [14p-A31-14] Intrinsic Half-metallicity of CrO2 Revealed by Bulk-sensitive Spin-resolved Photoemission Spectroscopy

△ [14p-A31-16] Electric Field Modulation of Anomalous and Topological Hall Effects in SrIrO3 / SrRuO3 Heterostructures

[15a-A31-1~13] 6.3 Oxide electronics

[16a-A31-1~9] 6.3 Oxide electronics

[15p-P3-1~32] 6.3 Oxide electronics

▲ [15p-P3-3] Hidden Electronic Phase Boundary in the SrTiO3−SrNbO3 Solid-solution System

Authentication

△ [14p-A31-4] Tailoring the crystal structure of TiO₂ films deposited by reactive sputtering (1);
Selective rutile growth by controlling the sputtering parameters or Sn-doping

△ [14p-A31-6] TiO₂/WO₃ multi-layer Films Deposited by reactive Sputtering for Visible Light-active Photocatalyst

△ [14p-A31-7] Reversible resistive switching by the control of oxygen vacancy distribution in rutile TiO₂ single crystals

△ [14p-A31-8] Electrochemical characterizations of an ionic liquid/anatase TiO₂ interface

△ [14p-A31-9] Ag₂S atomic switch based Tug of War devices for neuromorphic networks

△ [14p-A31-11] Ultrafast charging in Li(Ni_0.5Mn_1.5)O₄ solid-state batteries

▼ [14p-A31-13] Growth of Crystalline BaSi₂ Thin Films by Vacuum Evaporation on Poly-Crystalline Silicon Fabricated by Aluminum Induced Crystallization

△ [14p-A31-14] Intrinsic Half-metallicity of CrO₂ Revealed by Bulk-sensitive Spin-resolved Photoemission Spectroscopy

△ [14p-A31-16] Electric Field Modulation of Anomalous and Topological Hall Effects in SrIrO₃ / SrRuO₃Heterostructures

▲ [15p-P3-3] Hidden Electronic Phase Boundary in the SrTiO₃−SrNbO₃ Solid-solution System