[13a-B9-1~11] 8.4 Plasma etching

[13a-B9-10] Mechanism of Ta etching using neutral beam enhanced complex reaction

〇Tomohiro Kubota¹, Momoji Kubo², Seiji Samukawa^1,3 (1.IFS, Tohoku Univ., 2.IMR, Tohoku Univ., 3.WPI-AIMR, Tohoku Univ.)

Keywords:transition metal complex, magnetoresistive RAM, etching process

Anisotropic etching process of transition metals (especially magnetic metals) is important for realization of magnetic memory (MRAM). Theoretical approach based on first-principle calculation is performed to understand mechanism of a new etching process by adsorption of organic molecule such as ethanol without exposure to plasma and irradiation of neutral beams of argon and oxygen. Dependence on organic molecule was examined to improve this method.