[13a-B9-1~11] 8.4 Plasma etching

Tue. Sep 13, 2016 9:00 AM - 11:45 AM B9 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[13a-B9-1] Electronic properties and dissociation channels of HFC-1234yf

〇Toshio Hayashi¹, Makoto Sekine¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ.)

9:15 AM - 9:30 AM

△ [13a-B9-2] Phase-resolved interelectrode distribution of electron density in afterglow of synchronized dc imposed pulsed plasmas for advance dielectric etching processes

〇Toshinari Ueyama¹, Manabu Iwata², Yusuke Fukunaga¹, Takayoshi Tsutsumi¹, Keigo Takeda¹, Hiroki Kondo¹, Kenji Ishikawa¹, Makoto Sekine¹, Yoshinobu Ohya², Masaru Hori¹, Hideo Sugai³ (1.Nagoya Univ., 2.Tokyo Electron MIyagi Ltd., 3.Chubu Univ.)

9:30 AM - 9:45 AM

[13a-B9-3] Precise etching rate control of Inward-plasma

〇ryou Kanou^1,3, Hiroshi Suga¹, Shun'ichiro Shimbori², Satoshi Takahashi², Jun Miyawaki³, Toshitaka Kubo³, Atsushi Ando³, Tetsuo Shimizu³ (1.CIT, 2.Sunyou Co.,Ltd, 3.AIST)

9:45 AM - 10:00 AM

[13a-B9-4] Molecular dynamics simulation of surface reactions in atomic layer etching (ALE) of SiN

〇RYOKO SUGANO¹, MICHORO ISOBE², SATOSHI HAMAGUCHI² (1.Hitachi., Ltd., 2.Osaka Univ.)

10:00 AM - 10:15 AM

[13a-B9-5] Structural analyses on the outermost surface of Si etched in Ar/CF₄ plasmas

〇(M1)Gento Kuroda¹, Kazuo Takahashi¹, Koji Nishio¹ (1.Kyoto Institute of Technology)

10:15 AM - 10:30 AM

[13a-B9-6] Investigation of plasma-induced damage in silicon trench structures

〇Shuichi Kuboi¹, Masashi Yamage¹, Satoshi Ishikawa¹ (1.CMC, Toshiba Corp.)

10:30 AM - 10:45 AM

△ [13a-B9-7] Chemical Effects of Hydrogen Ion Irradiation on ITO Etching by Hydrocarbon Plasma

〇HU LI¹, Kazuhiro Karahashi¹, Masanaga Fukasawa², Kazunori Nagahata², Tetsuya Tatsumi², Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Sony)

10:45 AM - 11:00 AM

△ [13a-B9-8] Analyses of Ni sputtering by energetic ions from CO plasmas

〇Akito Kumamoto¹, Nicolas Mauchamp¹, Michiro Isobe¹, Kohei Mizotani¹, Hu Li¹, Tomoko Ito¹, Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ.)

11:00 AM - 11:15 AM

[13a-B9-9] CoFeB etching using neutral beam enhanced complex reaction

〇Tomohiro Kubota¹, Ryo Miyama², Yoshiyuki Kikuchi², Seiji Samukawa^1,3 (1.IFS, Tohoku Univ., 2.Tokyo Electron, 3.WPI-AIMR, Tohoku Univ.)

11:15 AM - 11:30 AM

[13a-B9-10] Mechanism of Ta etching using neutral beam enhanced complex reaction

〇Tomohiro Kubota¹, Momoji Kubo², Seiji Samukawa^1,3 (1.IFS, Tohoku Univ., 2.IMR, Tohoku Univ., 3.WPI-AIMR, Tohoku Univ.)

11:30 AM - 11:45 AM

[13a-B9-11] Atomic Layer Etching of TiN Using Formation and Desorption of Modified Layer

〇Kazunori Shinoda¹, Nobuya Miyoshi¹, Hiroyuki Kobayashi¹, Masaru Kurihara¹, Satoshi Sakai², Masaru Izawa², Kenji Ishikawa³, Masaru Hori³ (1.Hitachi, 2.Hitachi High-Tech, 3.Nagoya Univ.)

Session information