[13a-C42-1~8] 9.3 ナノエレクトロニクス

▲ [13a-C42-2] Single-Electron Transistors made by Pt-based Narrow Line Width Nanogap Electrodes

〇(D)Yoonyoung Choi¹、Yasuo Azuma¹、Yutaka Majima¹ (1.Tokyo Inst. of Tech.)

キーワード：Single electron transistor, Pt-based Narrow Line Width Nanogap Electrodes

Many novel potential applications exploiting the advantage of single-electron transistors (SETs) have attracted the great attention owing to SET characteristics which can offer small device size down to sub-10 nm, low power consumption, high speed operation and single-electron sensitivity.We have been using gold nanogap electrodes for the fabrication of SETs. However, SETs based on gold nanogap electrodes have the difficulty of fabrication because gold nanogap electrodes become unstable when the line width of nanogap electrodes is less than about 30 nm. Here we introduce platinum as a nanogap electrodes material which is expected to maintain the shape of the nanogap electrodes during the fabrication processes.These platinum nanogap electrodes could be expected to improve a gate capacitance and elevate the operation temperature of SETs toward room temperature.