Bulk GaN substrate with overall low dislocation density by Hydride Vaper Phase Epitaxy

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Tue. Sep 13, 2016 1:15 PM - 6:00 PM A21 (Main Hall A)

Tsutomu Araki(Ritsumeikan Univ.), Munetaka Arita(Univ. of Tokyo), Hisashi Murakami(TUAT)

4:45 PM - 5:00 PM

〇kota yukizane¹, Shin Goubara¹, Naoki Arita¹, Tohoru Matsubara¹, Ryo Inomoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi University)

Keywords:GaN, HVPE, dislocation