[13p-A21-1~16] 15.4 III-V-group nitride crystals

[13p-A21-11] Visualization of dislocation density in HVPE-grown GaN using facet controlling technique

〇Tohoru Matsubara¹, Shin Goubara¹, Kota Yukizane¹, Ryo Inomoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi University)

Keywords:dislocation density distribution, cathodoluminescence, selective growth

We have achieved low threading dislocation (TD) densities at whole surface of hydride-vapor-phase-epitaxy-grown GaN using facet controlling technique. Since a reduction mechanism of TDs in this technique has not been clear, we evaluate visualization of dislocation behavior. In this study, three-dimensional distributions of dislocation densities in both basal plane and cross-section were investigated by cathodoluminescence (CL) imaging using the inclined-polished GaN specimens.