[13p-A23-1~11] 6.1 Ferroelectric thin films

[13p-A23-4] Preparation of BiFeO₃ Thin Films on Patterned SrTiO₃ substrate

〇Shota SETO¹, Seiji Nakashima¹, Hironori Fujisawa¹, Masaru Shimizu¹ (1.Univ. of Hyogo)

Keywords:ferroelectric, ferroelectric domain wall, resistive switch

Ferroelectric charged domain wall is known for its resistive switching behavior. therefore adaptation for resistive random access memory. In this study, we formed slope-patterns on the surface of SrTiO₃ substrate by electron beam lithography and ion beam etching, and demonstrated the artificial induction of charged domain wall in rhombohedral ferroelectric BiFeO₃ thin film using patterned SrTiO₃ substrate.