Oral presentation

[13a-A23-1~7] 6.1 Ferroelectric thin films

Tue. Sep 13, 2016 10:00 AM - 11:45 AM A23 (201B)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:00 AM - 10:15 AM

[13a-A23-1] High Temperature XRD Analysis of In-Plane Strain for c-Axis Oriented PMnN-PZT Epitaxial Fast-Cooled Thin Film on Si Substrate.

〇Shinya Yoshida¹, Shuji Tanaka¹ (1.Tohoku Univ.)

10:15 AM - 10:30 AM

▼ [13a-A23-2] Deposition Temperature Dependency of Characteristics of PMnN-PZT Epitaxial Thin Film on Si Prepared by Sputter Deposition with Fast Cooling

〇(M2)Zhen Zhou¹, Shinya Yoshida¹, Shuji Tanaka¹ (1.Tohoku Univ.)

10:30 AM - 10:45 AM

[13a-A23-3] Fabrication and Evaluation of Piezoelectric Film by Compact Sputtering System

〇Isao Kimura¹, Hiroki Kobayashi¹, Tatsuro Tsuyuki¹, Takehito Jimbo¹, Koukou Suu¹, Hiroshi Sugita², Kenji Watanabe² (1.ULVAC, Inc., 2.ULVAC Kyusyu Corp.)

10:45 AM - 11:00 AM

[13a-A23-4] Development of Dry etching process for high-performance Piezoelectric MEMS Device

〇Tadashi Yamamoto¹, Hiroki Kobayashi¹, Takehito Jimbo¹, Ryuuichirou Kamimura¹ (1.ULVAC)

11:00 AM - 11:15 AM

▲ [13a-A23-5] Compositional dependence of BaTiO₃-xBaSnO₃ piezoelectric thin films prepared by combinatorial sputtering

Hongbo Cheng^1,2, 〇Takuya Teramoto¹, Hirotaka Hida¹, Isaku Kanno¹, Jun Ouyang² (1.Kobe Univ., 2.Shandong Univ.)

11:15 AM - 11:30 AM

[13a-A23-6] Improvement of dielectric properties of BiFeO₃ films for piezoelectric MEMS vibration energy harvester

〇Masaaki Aramaki¹, Kento Kariya¹, Takeshi Yoshimura¹, Shuichi Murakami², Norifumi Fujimura¹ (1.Osaka Pref. Univ., 2.TRI-Osaka)

11:30 AM - 11:45 AM

[13a-A23-7] Investigation of Piezoelectric Energy Harvesting for Walking

〇Ryota Kakihara¹, Kento Kariya¹, Yuji Matsushita¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref Univ.Eng.)

Oral presentation

[13p-A23-1~11] 6.1 Ferroelectric thin films

Tue. Sep 13, 2016 1:30 PM - 4:45 PM A23 (201B)

Shintaro Yasui(Titech), Takao Shimizu(Titech)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

▲ [13p-A23-1] [2016 Fellow International Special Lectures] Piezoresponse Force Microscopy - candid camera for the nanoferroelectric world

〇Alexei Gruverman¹ (1.University of Nebraska,Lincoln)

2:00 PM - 2:15 PM

△ [13p-A23-2] Contribution of Domain Walls on Direct Piezoelectric Response of BiFeO₃ Films

〇Kento Kariya¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

2:15 PM - 2:30 PM

△ [13p-A23-3] Domain structure of dominantly in-plane-polarized Pb(Zr,Ti)O₃ thin film

〇Daichi Ichinose¹, Yoshitaka Ehara¹, Takao Shimizu¹, Osami Sakata^2,3, Tomoaki Yamada^4,5, Alexei Gruverman⁶, Hiroshi Funakubo¹ (1.Tokyo Tech, 2.NIMS, 3.SPring-8, 4.Nagoya Univ., 5.PRESTO, 6.Univ. Nebraska)

2:30 PM - 2:45 PM

[13p-A23-4] Preparation of BiFeO₃ Thin Films on Patterned SrTiO₃ substrate

〇Shota SETO¹, Seiji Nakashima¹, Hironori Fujisawa¹, Masaru Shimizu¹ (1.Univ. of Hyogo)

2:45 PM - 3:00 PM

▲ [13p-A23-5] Voltage-Pulse-Induced Expansion of Chalcogenide Superlattices Measured by Scanning Probe Microscopy

〇Leonid Bolotov¹, Tetsuya Tada¹, Yuta Saito¹, Junji Tominaga¹ (1.AIST)

3:15 PM - 3:30 PM

[13p-A23-6] [Young Scientist Presentation Award Speech] First-principles simulation of nanocapacitors--dead layer effect and negative capacitance

〇Shusuke Kasamatsu¹, Satoshi Watanabe², Seungwu Han³, Cheol Seong Hwang³ (1.ISSP, UTokyo, 2.DME, UTokyo, 3.DMSE, Seoul National Univ.)

3:30 PM - 3:45 PM

[13p-A23-7] Investigation on the relation of ferroelectricity and resistive hysteresis of BaTiO₃ thin film for ReRAM

〇Toshiyuki Sugie¹, So Maejima¹, Kaoru Yamashita¹, Minoru Noda¹ (1.Kyoto Inst. Tech.)

3:45 PM - 4:00 PM

[13p-A23-8] Resistive Switching and Photovoltaic Effects of Nd-Doped BFO Films

〇Akiharu Morimoto¹, Yusuke Yokota², Soh Kawabata² (1.College of Sci. & Eng., Kanazawa Univ., 2.Grad. School of Nat. Sci. & Tech., Kanazawa Univ.)

4:00 PM - 4:15 PM

[13p-A23-9] Direct measurement of the electrocaloric effect in ferroelectric thin films

〇Yuji Matsushita¹, Atsushi Nochida¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

4:15 PM - 4:30 PM

[13p-A23-10] Antiferroelectric and energy storage properties of (Pb,Y)(Sn,Zr)O₃ thin films

〇Shigeki Fukuda¹, Yoichiro Hashizume¹, Takashi Nakajima¹, Soichiro Okamura¹ (1.Tokyo Univ. of Sci.)

4:30 PM - 4:45 PM

[13p-A23-11] Anomalous Photovoltaic Effects in Single-domain BiFeO₃ Thin Films Doped with Transition Metal Elements (Ⅲ)

〇(M2)kota takayama¹, Seiji Nakashima¹, Hironori Fujisawa¹, Masaru Shimizu¹ (1.Univ. of Hyogo)

Oral presentation

[14a-A23-1~10] 6.1 Ferroelectric thin films

Wed. Sep 14, 2016 9:00 AM - 11:45 AM A23 (201B)

Shinya Yoshida(Tohoku Univ.), Tomoaki Yamada(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[14a-A23-1] Growth of BiFeO₃ thin films with giant c/a ratio on (0001)ZnO substrate

〇Atsushi Nochida¹, Tomoya Komae¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ)

9:15 AM - 9:30 AM

[14a-A23-2] In-plane ferroelectric polarization in epitaxial BaTiO₃ thin films for multiferroic heterostructures

〇(PC)Katsuyoshi Komatsu¹, Ippei Suzuki¹, Takumi Aoki², Yosuke Hamasaki¹, Mitsuru Itoh¹, Tomoyasu Taniyama¹ (1.TiTech, 2.TDK)

9:30 AM - 9:45 AM

△ [14a-A23-3] Different Temperature Dependent Stability of Bi Layered Perovskite in Epitaxial Piller-Matrix Nanocomposite Films

〇Ryoma Harada¹, Yuta Kawahira¹, Shingo Maruyama¹, Yuji Matsumoto¹ (1.Tohoku Univ.)

9:45 AM - 10:00 AM

[14a-A23-4] Electric field induced change of the crystal structure in YO_1.5-HfO₂thin film

〇Takao Shimizu¹, Takanori Mimura¹, Kiliha Katayama¹, Takanori Kiguchi², Akihiro Akama², Toyohiko Konno², Osami Sakata³, Hiroshi Funakubo¹ (1.Tokyo Inst. Tech., 2.Tohoku Univ., 3.NIMS)

10:00 AM - 10:15 AM

[14a-A23-5] Domain structure control in ferroelectric Pb(Zr,Ti)O₃ nano-rods by charge screening

〇Tomoaki Yamada¹, Daisuke Ito¹, Tomas Sluka², Nava Setter², Osami Sakata^3,4, Takahiro Namazu⁵, Hiroshi Funakubo⁴, Masahito Yoshino¹, Takanori Nagasaki¹ (1.Nagoya Univ., 2.EPFL, 3.NIMS, 4.Tokyo Tech., 5.Aichi Inst. Tech.)

10:30 AM - 10:45 AM

△ [14a-A23-6] Change of crystal structure and properties with heat treatment in ferroelectric HfO₂-based films

〇Takanori Mimura¹, Takao Shimizu², Hiroshi Uchida³, Takanori Kiguchi⁴, Akihiro Akama⁴, Toyohiko Konno⁴, Osami Sakata⁵, Hiroshi Funakubo^1,2,6 (1.Tokyo Tech. IGS, 2.Tokyo Tech. MECS, 3.Sophia Univ. FST, 4.Tohoku Univ. IMR, 5.NIMS, 6.Tokyo Tech. DMSE)

10:45 AM - 11:00 AM

△ [14a-A23-7] Growth of orientation controlled epitaxial (Bi_,K)TiO₃ films by pulse laser deposition.

〇Yuichi Nemoto¹, Daichi Ichinose², Takao Shimizu³, Hiroshi Uchida⁴, Yusuke Sato⁵, Wakiko Yamaoka⁵, Hiroshi Funakubo^1,2,3 (1.Tokyo Tech. IGS, 2.Tokyo Tech. MCT, 3.Tokyo Tech. MECS, 4.Sophia Univ. FST, 5.TDK corp.)

11:00 AM - 11:15 AM

[14a-A23-8] Dielectric properties of BaTiO₃ based nanocube assemblies

〇Kenichi Mimura¹, Kazumi Kato¹ (1.AIST)

11:15 AM - 11:30 AM

[14a-A23-9] Asymmetric Domain Switching in VDF/TeFE Copolymer Thin Films

〇Yuuta Nakagawa¹, Naoto Enomoto¹, Yoichiro Hashizume¹, Takashi Nakajima¹, Alexei Gruverman², Soichiro Okamura¹ (1.Tokyo Univ. of Sci., 2.Univ. of Nebraska-Lincoln)

11:30 AM - 11:45 AM

△ [14a-A23-10] Polarization Induced Resistance Switching Effect in Au / VDF-TrFE / Si Junction

〇Naoto Enomoto¹, Yuuta Nakagawa¹, Yoichiro Hashizume¹, Takashi Nakajima¹, Soichiro Okamura¹ (1.Tokyo Univ. of Sci.)

Poster presentation

[14p-P3-1~3] 6.1 Ferroelectric thin films

Wed. Sep 14, 2016 1:30 PM - 3:30 PM P3 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[14p-P3-1] Evaluation of photovoltaic effect using KNN thin film.

〇Yuhei Oochi¹, Hirotaka Hida¹, Isaku Kanno¹ (1.Kobe Univ.)

1:30 PM - 3:30 PM

[14p-P3-2] Flight Properties of Ink-Jet Liquid Solutions for Ferroelectric Film Fabrication

〇Masaki Yamaguchi^1,2, Yuta Matsuoka¹, Yoichiro Masuda³ (1.Fac. of Eng., Shibaura Inst. of Tech., 2.RCGI, Shibaura Inst. of Tech., 3.Hachinohe Inst. of Tech.)

1:30 PM - 3:30 PM

[14p-P3-3] Crystal orientation of Bi_4-xLa_xTi₃O₁₂ thin films formed on Si(100) substrates and electrical characteristics of the MFS structures

〇Atsushi Kohno¹, Takayuki Tajiri¹ (1.Fukuoka Univ.)

Sessions

6 Thin Films and Surfaces » 6.1 Ferroelectric thin films

[13a-A23-1~7] 6.1 Ferroelectric thin films

[13a-A23-1] High Temperature XRD Analysis of In-Plane Strain for c-Axis Oriented PMnN-PZT Epitaxial Fast-Cooled Thin Film on Si Substrate.

▼ [13a-A23-2] Deposition Temperature Dependency of Characteristics of PMnN-PZT Epitaxial Thin Film on Si Prepared by Sputter Deposition with Fast Cooling

[13a-A23-3] Fabrication and Evaluation of Piezoelectric Film by Compact Sputtering System

[13a-A23-4] Development of Dry etching process for high-performance Piezoelectric MEMS Device

▲ [13a-A23-5] Compositional dependence of BaTiO₃-xBaSnO₃ piezoelectric thin films prepared by combinatorial sputtering

[13a-A23-6] Improvement of dielectric properties of BiFeO₃ films for piezoelectric MEMS vibration energy harvester

[13a-A23-7] Investigation of Piezoelectric Energy Harvesting for Walking

[13p-A23-1~11] 6.1 Ferroelectric thin films

▲ [13p-A23-1] [2016 Fellow International Special Lectures] Piezoresponse Force Microscopy - candid camera for the nanoferroelectric world

△ [13p-A23-2] Contribution of Domain Walls on Direct Piezoelectric Response of BiFeO₃ Films

△ [13p-A23-3] Domain structure of dominantly in-plane-polarized Pb(Zr,Ti)O₃ thin film

[13p-A23-4] Preparation of BiFeO₃ Thin Films on Patterned SrTiO₃ substrate

▲ [13p-A23-5] Voltage-Pulse-Induced Expansion of Chalcogenide Superlattices Measured by Scanning Probe Microscopy

[13p-A23-6] [Young Scientist Presentation Award Speech] First-principles simulation of nanocapacitors--dead layer effect and negative capacitance

[13p-A23-7] Investigation on the relation of ferroelectricity and resistive hysteresis of BaTiO₃ thin film for ReRAM

[13p-A23-8] Resistive Switching and Photovoltaic Effects of Nd-Doped BFO Films

[13p-A23-9] Direct measurement of the electrocaloric effect in ferroelectric thin films

[13p-A23-10] Antiferroelectric and energy storage properties of (Pb,Y)(Sn,Zr)O₃ thin films

[13p-A23-11] Anomalous Photovoltaic Effects in Single-domain BiFeO₃ Thin Films Doped with Transition Metal Elements (Ⅲ)

[14a-A23-1~10] 6.1 Ferroelectric thin films

[14a-A23-1] Growth of BiFeO₃ thin films with giant c/a ratio on (0001)ZnO substrate

[14a-A23-2] In-plane ferroelectric polarization in epitaxial BaTiO₃ thin films for multiferroic heterostructures

△ [14a-A23-3] Different Temperature Dependent Stability of Bi Layered Perovskite in Epitaxial Piller-Matrix Nanocomposite Films

[14a-A23-4] Electric field induced change of the crystal structure in YO_1.5-HfO₂thin film

[14a-A23-5] Domain structure control in ferroelectric Pb(Zr,Ti)O₃ nano-rods by charge screening

△ [14a-A23-6] Change of crystal structure and properties with heat treatment in ferroelectric HfO₂-based films

△ [14a-A23-7] Growth of orientation controlled epitaxial (Bi_,K)TiO₃ films by pulse laser deposition.

[14a-A23-8] Dielectric properties of BaTiO₃ based nanocube assemblies

[14a-A23-9] Asymmetric Domain Switching in VDF/TeFE Copolymer Thin Films

△ [14a-A23-10] Polarization Induced Resistance Switching Effect in Au / VDF-TrFE / Si Junction

[14p-P3-1~3] 6.1 Ferroelectric thin films

[14p-P3-1] Evaluation of photovoltaic effect using KNN thin film.

[14p-P3-2] Flight Properties of Ink-Jet Liquid Solutions for Ferroelectric Film Fabrication

[14p-P3-3] Crystal orientation of Bi_4-xLa_xTi₃O₁₂ thin films formed on Si(100) substrates and electrical characteristics of the MFS structures

Authentication

Sessions

6 Thin Films and Surfaces » 6.1 Ferroelectric thin films

[13a-A23-1~7] 6.1 Ferroelectric thin films

▼ [13a-A23-2] Deposition Temperature Dependency of Characteristics of PMnN-PZT Epitaxial Thin Film on Si Prepared by Sputter Deposition with Fast Cooling

▲ [13a-A23-5] Compositional dependence of BaTiO3-xBaSnO3 piezoelectric thin films prepared by combinatorial sputtering

[13p-A23-1~11] 6.1 Ferroelectric thin films

▲ [13p-A23-1] [2016 Fellow International Special Lectures] Piezoresponse Force Microscopy - candid camera for the nanoferroelectric world

△ [13p-A23-2] Contribution of Domain Walls on Direct Piezoelectric Response of BiFeO3 Films

△ [13p-A23-3] Domain structure of dominantly in-plane-polarized Pb(Zr,Ti)O3 thin film

▲ [13p-A23-5] Voltage-Pulse-Induced Expansion of Chalcogenide Superlattices Measured by Scanning Probe Microscopy

[14a-A23-1~10] 6.1 Ferroelectric thin films

△ [14a-A23-3] Different Temperature Dependent Stability of Bi Layered Perovskite in Epitaxial Piller-Matrix Nanocomposite Films

△ [14a-A23-6] Change of crystal structure and properties with heat treatment in ferroelectric HfO2-based films

△ [14a-A23-7] Growth of orientation controlled epitaxial (Bi, K)TiO3 films by pulse laser deposition.

△ [14a-A23-10] Polarization Induced Resistance Switching Effect in Au / VDF-TrFE / Si Junction

[14p-P3-1~3] 6.1 Ferroelectric thin films

Authentication

▲ [13a-A23-5] Compositional dependence of BaTiO₃-xBaSnO₃ piezoelectric thin films prepared by combinatorial sputtering

△ [13p-A23-2] Contribution of Domain Walls on Direct Piezoelectric Response of BiFeO₃ Films

△ [13p-A23-3] Domain structure of dominantly in-plane-polarized Pb(Zr,Ti)O₃ thin film

△ [14a-A23-6] Change of crystal structure and properties with heat treatment in ferroelectric HfO₂-based films

△ [14a-A23-7] Growth of orientation controlled epitaxial (Bi_,K)TiO₃ films by pulse laser deposition.