The 77th JSAP Autumn Meeting, 2016

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Oral presentation

6 Thin Films and Surfaces » 6.1 Ferroelectric thin films

[13p-A23-1~11] 6.1 Ferroelectric thin films

Tue. Sep 13, 2016 1:30 PM - 4:45 PM A23 (201B)

Shintaro Yasui(Titech), Takao Shimizu(Titech)

3:45 PM - 4:00 PM

[13p-A23-8] Resistive Switching and Photovoltaic Effects of Nd-Doped BFO Films

〇Akiharu Morimoto1, Yusuke Yokota2, Soh Kawabata2 (1.College of Sci. & Eng., Kanazawa Univ., 2.Grad. School of Nat. Sci. & Tech., Kanazawa Univ.)

Keywords:multiferroic thin films, resistive switching memory, photovoltaic property

10 wt%Nd-doped Bi1.0Nd0.1Fe1.0O3(BNF) ferroelectric thin films were fabricated by PLD on SRO-coated Nb:STO single crystalline substrates. After deposition of top electrodes onto the films, the resistive switching and photovoltaic properties were examined for the capacitor structures, and then the model was discussed.