[13p-A31-1~10] 30 years anniversary for Nobel prize of STM and development of AFM

[13p-A31-10] Development of Si and Beyond-Si Transistors and the SPM Characterization

〇Koji Usuda¹ (1.Toshiba Corp.)

Keywords:SPM, Si, Transistor

Si semiconductor transistor (Tr) technologies have continued to develop for more than 30 years based on the so-called "scaling law". However, in the past few years, the speed of development has slowed down, and the technology development based on the conventional roadmap for the Si devices is approaching its limit, “reaching the end of the Si-LSI roadmap". To overcome this problem and achieve further development, the latest research and development is focusing on new device technologies that do not rely on miniaturization. With this background, to further exploit the unique characteristics of SPM technique, a newly developed SPM evaluation method is strongly required to deal with the new technology of the above-mentioned various device processing fields. With such reason, this presentation first discusses the development of Si logic devices as well as conventional Si-LSI. Then, some examples of applying the SPM evaluation technology to the latest devices will be introduced.