The 77th JSAP Autumn Meeting, 2016

Presentation information

Print

Oral presentation

13 Semiconductors » 13.9 Optical properties and light-emitting devices

[13p-A35-1~15] 13.9 Optical properties and light-emitting devices

Tue. Sep 13, 2016 1:15 PM - 5:15 PM A35 (303-304)

Hiroko Kominami(Shizuoka Univ.), Yasushi Nanai(Nihon Univ.)

2:00 PM - 2:15 PM

[13p-A35-4] Emission enhancement of Eu-doped GaN by multiple quantum blocking layer

〇Tomoya Yamada1, Tomohiro Inaba1, Takanori Kojima1, Atsushi Koizumi1, Yasufumi Fujiwara1 (1.Osaka Univ.)

Keywords:LED, GaN, Eu

We have demonstrated a Eu-doped GaN(GaN:Eu) red light-emitting diode (LED) operating with low voltage. However, light output has been still insufficient for practical use. To enhance the light output, I designed the LED with multiple quantum blocking layer(MQB) for electron blocking layer(EBL). The result shows that the light output of LED with MQB EBL is higher than LEDs with Single EBL and without EBL.