[13p-A35-1~15] 13.9 Optical properties and light-emitting devices

△ [13p-A35-7] Carrier density dependence of spin relaxation time in Be-doped InGaAsP bulk (10-300 K)

〇Kizuku Yamada¹, Shunsuke Ohki¹, Tomoki Ishikawa¹, Takuya Kamezaki¹, Shulong Lu², Lian Ji², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.SINANO-CAS)

Keywords:spin, InGaAsP, carrier density dependence

Experiments and analyses of spin relaxation of InGaAsP have attracted intense interest with the continuous development of solar cells and other solar energy materials. Although there are some reports indicating that higher carrier density samples have shorter carrier relaxation times, there are few reports indicating that the difference of carrier density affects spin relaxation. Here, we report the carrier density dependence of spin relaxation time in Be-doped InGaAsP grown on an InP substrate observed by time-resolved pump and probe reflectance measurements.