[13p-A37-1~13] 4.6 Nanocarbon and 2D Materials

▼ [13p-A37-12] Multifunctional Phosphonic Acid Self-Assembled Monolayer for Metal Patterning
and Ultrathin Gate Dielectrics in Fabrication of MoS₂ Field-Effect Transistors

〇Wanjing Du¹、Kawanago Takamasa¹、Oda Shunri¹ (1.Tokyo Tech.QNERC)

キーワード：Self-Assembled Monolayer, MoS2 Field-Effect Transistors

This study describes the applications of a self-assembled monolayer (SAM) to the fabrication of MoS₂ FETs. SAM has the ability to generate highly aligned electrodes and provide excellent electrical insulation [1]−[3]. The fabrication process of MoS₂ FETs includes removing metal layer on SAM and the utilization of SAM as an ultrathin gate dielectrics. This methods enables a rapid route to fabricate MoS₂ FETs accompanied by low driving voltage.