2016年 第77回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

4 JSAP-OSA Joint Symposia 2016 » 4.6 Nanocarbon and 2D Materials

[13p-A37-1~13] 4.6 Nanocarbon and 2D Materials

2016年9月13日(火) 13:15 〜 17:45 A37 (306-307)

松田 一成(京大)、宮内 雄平(京大)

13:45 〜 14:00

[13p-A37-2] Chemical solution processed MoS2 on high-k oxide film

〇(DC)Joonam Kim1、Kenichi Haga1、Koichi Higasimine1、Eisuke Tokumitsu1 (1.JAIST)

キーワード:2Dsemiconductor, MoS2, solution process

Recently, exfoliated MoS2 atomic thin layers have been fabricated into transistors which demonstrate excellent on/off current ratios and high carrier mobility. On the other hand, for large area formation of MoS2 at low cost, the solution based process is promising. In this work, we report chemical solution process for MoS2 on high-k dielectric films. Source solution used in this work is ammonium tetrathiomolybdate ((NH4)2MoS4) dissolved in N-Methyl-2-pyrrolidone (NMP). The chemical-solution-processed MoS2 directly deposited on Nb doped ZrO2 (NZO) film. The well-defined MoS2 film are observed by Raman spectrometer, X-ray diffraction and Transmission electron microscope. The details will be presented at the conference, including coating properties on various oxide substrates, which correlates surface energies of the substrates.