[13p-B13-1~12] 13.5 Semiconductor devices and related technologies

[13p-B13-1] Variability Characterization in Isoelectronic-Trap-Assisted TFETs

〇Takahiro Mori¹, Shinji Migita¹, Koichi Fukuda¹, Yukinori Morita¹, Wataru Mizubayashi¹, Yongxun Liu¹, Shin-ichi O'uchi¹, Hiroshi Fuketa¹, Shintaro Otsuka¹, Tetsuji Yasuda¹, Meishoku Masahara¹, Takashi Matsukawa¹ (1.AIST)

Keywords:tunnel field-effect transistor, Isoelectronic trap, Variability

We report the experimental characterization of the variability in isoelectronic-trap (IET)-assisted TFETs. The IET technology suppresses ON current variability as well as enhances ON current. According to Kane’s tunneling rate equation, the sensitivity of current fluctuation to electric field fluctuation at the junction is suppressed with the tunnel probability increase. The observed suppression can be explained in this manner.