Oral presentation

[13p-B13-1~12] 13.5 Semiconductor devices and related technologies

Tue. Sep 13, 2016 1:45 PM - 5:00 PM B13 (Exhibition Hall)

Toshiaki Tsuchiya(Shimane Univ.), Yukinori Ono(Shizuoka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[13p-B13-1] Variability Characterization in Isoelectronic-Trap-Assisted TFETs

〇Takahiro Mori¹, Shinji Migita¹, Koichi Fukuda¹, Yukinori Morita¹, Wataru Mizubayashi¹, Yongxun Liu¹, Shin-ichi O'uchi¹, Hiroshi Fuketa¹, Shintaro Otsuka¹, Tetsuji Yasuda¹, Meishoku Masahara¹, Takashi Matsukawa¹ (1.AIST)

2:00 PM - 2:15 PM

[13p-B13-2] Performance Improvement of InGaAs TFETs by employing EOT Scaling and Quantum Well

〇DAEHWAN AHN^1,2, MITSURU TAKENAKA^1,2, SHINICHI TAKAGI^1,2 (1.The Univ. of Tokyo, 2.JST CREST)

2:15 PM - 2:30 PM

[13p-B13-3] Change in electrical characteristics of InGaAs tunnel FETs by gate current stress

〇SANghee YOON^1,2, CHIH-YU CHANG^1,2, DAEHWAN AHN^1,2, TAKENAKA MITSURU^1,2, SHINICHI TAKAGI^1,2 (1.Tokyo University, 2.JST CREST)

2:30 PM - 2:45 PM

[13p-B13-4] Negative Capacitance as a Performance Booster for Tunnel FET

〇Masaharu Kobayashi¹, Kyungmin Jang¹, Nozomu Ueyama¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

2:45 PM - 3:00 PM

[13p-B13-5] On Gate Stack Scalability of Double-Gate Negative-Capacitance FET with Ferroelectric HfO₂ for Energy-Efficient Sub-0.2V Operation

〇(DC)Kyungmin Jang¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

3:00 PM - 3:15 PM

[13p-B13-6] Fluctuation of FinFET parasitic resistance: Impact of extension doping condition

〇Takashi Matsukawa¹, Takahiro Mori¹, Yukinori Morita¹, Shintaro Otsuka¹, Yongxun Liu¹, Shinichi O'uchi¹, Hiroshi Fuketa¹, Shinji Migita¹, Meishoku Masahara¹ (1.AIST)

3:30 PM - 3:45 PM

△ [13p-B13-7] Impacts of energy relaxation rates on quasi-ballistic hole transport capability in Ge and Si nanowires

〇Hajime Tanaka¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

3:45 PM - 4:00 PM

△ [13p-B13-8] Equivalent-Circuit Model of Physically-Defined Silicon Triple Quantum Dots

〇Soichiro Hiraoka^1,2, Horibe Kosuke^1,2, Kodera Tetsuo^1,2, Oda Shunri^1,2 (1.QNERC and Dept of EE, Tokyo Tech, 2.Dept of EE, Tokyo Tech)

4:00 PM - 4:15 PM

[13p-B13-9] High-accuracy operation of single-trap electron pump at 7.4 GHz

〇Gento Yamahata¹, Stephen Giblin², Masaya Kataoka², Takeshi Karasawa¹, Akira Fujiwara¹ (1.NTT Basic Research Lab., 2.National Physical Lab.)

4:15 PM - 4:30 PM

△ [13p-B13-10] Magnetic field dependence of the leakage current in Pauli spin blockade in p-channel silicon double quantum dots

〇Yu Yamaoka¹, Kazuma Iwasaki¹, Shunri Oda¹, Tetsuo Kodera¹ (1.Tokyo Tech)

4:30 PM - 4:45 PM

△ [13p-B13-11] Coherent Effects of Interface Charge in a Silicon Quantum Dot

〇(M2)Michiru Maekawa¹, Jaime O. Tenorio-Pearl¹, Ernst D. Herbschleb¹, Yu Yamaoka¹, Tetsuo Kodera¹, Shunri Oda¹ (1.QNERC and Dept of EE, Tokyo Tech)

4:45 PM - 5:00 PM

▲ [13p-B13-12] Passivation effects of 3D Array of Si-nanodisks Fabricated with Bio-template and Neutral Beam Etching Process for Photovoltaic Application

〇(P)MdZaman Molla¹, Shuichi Noda¹, Seiji Samukawa¹ (1.Tohoku University)

Oral presentation

[14a-B13-1~10] 13.5 Semiconductor devices and related technologies

Wed. Sep 14, 2016 9:00 AM - 12:15 PM B13 (Exhibition Hall)

Hitoshi Wakabayashi(Titech)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:30 AM

[14a-B13-1] [JSAP Paper Award Speech] Charge pumping current from single Si/SiO₂ interface traps: Direct observation of P_b centers and fundamental trap-counting by the charge pumping method

〇Toshiaki Tsuchiya¹, Ono Yukinori² (1.Shimane Univ., 2.Shizuoka Univ.)

9:30 AM - 10:00 AM

[14a-B13-2] [JSAP Paper Award Speech] Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS

〇Yoshiki Kamata¹, Masahiro Koike¹, Kurosawa Etsuo², Kurosawa Masashi³, Ota Hiroyuki², Nakatsuka Osamu³, Zaima Shigeaki³, Tezuka Tsutomu¹ (1.Toshiba Corp., 2.AIST, 3.Nagoya Univ.)

10:00 AM - 10:15 AM

▲ [14a-B13-3] [JSAP Young Scientist Award Speech] Deviation from the law of energy equipartition in a small dynamic-random-access memory

〇Carles Pierre-Alix¹, Katsuhiko Nishiguchi², Akira Fujiwara² (1.ESPCI ParisTech, 2.NTT)

10:15 AM - 10:30 AM

[14a-B13-4] Distribution of the energy levels of single interface-traps: Is it really "U-shaped"?

〇Toshiaki Tsuchiya¹, Patrick M. Lenahan² (1.Shimane Univ., 2.Pennsylvania State Univ.)

10:30 AM - 10:45 AM

[14a-B13-5] Charge pumping EDMR method towards single interface defect analysis

〇Masahiro Hori¹, Ryoichi Narimatsu², Toshiaki Tsuchiya³, Yukinori Ono¹ (1.Shizuoka Univ., 2.Univ. of Toyama, 3.Shimane Univ.)

11:00 AM - 11:15 AM

[14a-B13-6] Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm

〇Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Ryota Suzuki¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

11:15 AM - 11:30 AM

[14a-B13-7] Measurement of SRAM Power-up Data using an Addressable Cell Array Test Structure

〇KIYOSHI TAKEUCHI¹, TOMOKO MIZUTANI¹, HIROFUMI SHINOHARA², TAKUYA SARAYA¹, MASAHARU KOBAYASHI¹, TOSHIRO HIRAMOTO¹ (1.Univ. Tokyo, 2.Waseda Univ.)

11:30 AM - 11:45 AM

▲ [14a-B13-8] A New Write Stability Metric for Yield Estimation in SRAM Cells at Low Supply Voltage

〇(D)Hao Qiu¹, Kiyoshi Takeuchi¹, Tomoko Mizutani¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.Institute of Industrial Science, The University of Tokyo)

11:45 AM - 12:00 PM

[14a-B13-9] RF characteristics in InGaAs MOSHEMT on quartz glass substrate

〇Eiji Kume¹, Hiroyuki Ishii², Hiroyuki Hattori², Wen-Hsin Chang², Mutsuo Ogura¹, Tatsuro Maeda² (1.IRspec Corp., 2.AIST-NeRI)

12:00 PM - 12:15 PM

[14a-B13-10] Development of Radiation Tolerant Si-MOSFET Ⅱ

〇Shutetsu Akiyama¹, Masashi Otsuka¹, Jun Aizawa¹, Kunihisa Ishii¹, Katsumi Yoshizawa¹, Tomonari Nakada², Atsushi Watanabe², Kohichi Mochiki³ (1.Pioneer MTC, 2.Pioneer, 3.Tokyo City Univ.)

Poster presentation

[14p-P6-1~11] 13.5 Semiconductor devices and related technologies

Wed. Sep 14, 2016 1:30 PM - 3:30 PM P6 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 3:30 PM

△ [14p-P6-1] Study of resistance controllability of analog memory for nanodot-array devices

〇(D)Mingyu Jo¹, Reon Katsumura¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹, Hideyuki Ando², Takashi Morie² (1.Hokkaido Univ., 2.Kyushu Inst. Tech.)

1:30 PM - 3:30 PM

△ [14p-P6-2] Evaluation of Si single-electron transistor with multiple gates

〇Takahumi Uchida¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Akira Fujiwara², Yasuo Takahashi¹ (1.IST. Hokkaido Univ., 2.NTT Basic Research Labs.)

1:30 PM - 3:30 PM

△ [14p-P6-3] Evaluation of multilevel and analog memory function of resistive random access memory using Ta/Ta₂O₅

〇Reon Katsumura¹, Mika Gronroos¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹, Hideyuki Andoh², Takashi Morie² (1.Hokkaido Univ., 2.Kyushu Inst. Tech.)

1:30 PM - 3:30 PM

[14p-P6-4] Kinetic Monte Carlo Simulation for Switching Probability of ReRAM

〇Masataka Shirasawa¹, Mlandeli Dlamini¹, Yoshinari Kamakura¹ (1.Osaka Univ.)

1:30 PM - 3:30 PM

[14p-P6-5] Feasibility of inverter with non-power consumption by DNA/Si-MOSFET
and controlled parasitic capacitance

〇Naoto Matsuo¹, Hibiki Nakano¹, Akira Heya¹, Tadao Takada¹, Kazushige Yamana¹, Tadashi Sato², Shin Yokoyama² (1.Univ. Hyogo, 2.Hiroshima Univ.)

1:30 PM - 3:30 PM

[14p-P6-6] Fabrication of Step-edge FET and Impedance Measurement for Flexible RFID Tag Application

〇Shimpei Shu¹, Tomoaki Hirayama¹, Shunsuke Isoda¹, Hiroshi Yamauchi¹, Yugo Okada², Masatoshi Sakai¹, Masaaki Iizuka³, Kazuhiro Kudo¹ (1.Graduate School of Engineering, Chiba Univ., 2.Center for Frontier Science, Chiba Univ., 3.Faculty of Education, Chiba Univ.)

1:30 PM - 3:30 PM

[14p-P6-7] Detection of Breast Cancer Phantom Using CMOS Switching Matrix Circuits

〇(B)Yuki Kuwano¹, Afreen Azhari¹, Hang Song¹, Xia Xiao¹, Takamaro Kikkawa¹ (1.Hiroshima Univ.)

1:30 PM - 3:30 PM

[14p-P6-8] Printed acceleration sensor toward healthcare device

〇Daisuke Yamamoto¹, Shogo Nakata¹, Takayuki Arie¹, Seiji Akita¹, Kuniharu Takei¹ (1.Osaka Pref. Univ.)

1:30 PM - 3:30 PM

[14p-P6-9] Experimental Study on 2D-Si Based Semiconductor (Ⅳ)

〇Yusuke Omata¹, Takashi Aoki¹, Toshiyuki Sameshima², Tomohisa Mizuno¹ (1.Kanagawa Univ., 2.Tokyo Univ Agri. Tech.)

1:30 PM - 3:30 PM

[14p-P6-10] Analysis of a residual image in CMOS image sensor 1

〇Tasuku Kaneda¹, Akira Ohtani¹ (1.CANON INC.)

1:30 PM - 3:30 PM

[14p-P6-11] Analysis of a residual image in CMOS image sensor 2

〇Akira Ohtani¹, Tasuko Kaneda¹ (1.CANON INC.)

Sessions

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[13p-B13-1~12] 13.5 Semiconductor devices and related technologies

[13p-B13-1] Variability Characterization in Isoelectronic-Trap-Assisted TFETs

[13p-B13-2] Performance Improvement of InGaAs TFETs by employing EOT Scaling and Quantum Well

[13p-B13-3] Change in electrical characteristics of InGaAs tunnel FETs by gate current stress

[13p-B13-4] Negative Capacitance as a Performance Booster for Tunnel FET

[13p-B13-5] On Gate Stack Scalability of Double-Gate Negative-Capacitance FET with Ferroelectric HfO₂ for Energy-Efficient Sub-0.2V Operation

[13p-B13-6] Fluctuation of FinFET parasitic resistance: Impact of extension doping condition

△ [13p-B13-7] Impacts of energy relaxation rates on quasi-ballistic hole transport capability in Ge and Si nanowires

△ [13p-B13-8] Equivalent-Circuit Model of Physically-Defined Silicon Triple Quantum Dots

[13p-B13-9] High-accuracy operation of single-trap electron pump at 7.4 GHz

△ [13p-B13-10] Magnetic field dependence of the leakage current in Pauli spin blockade in p-channel silicon double quantum dots

△ [13p-B13-11] Coherent Effects of Interface Charge in a Silicon Quantum Dot

▲ [13p-B13-12] Passivation effects of 3D Array of Si-nanodisks Fabricated with Bio-template and Neutral Beam Etching Process for Photovoltaic Application

[14a-B13-1~10] 13.5 Semiconductor devices and related technologies

[14a-B13-1] [JSAP Paper Award Speech] Charge pumping current from single Si/SiO₂ interface traps: Direct observation of P_b centers and fundamental trap-counting by the charge pumping method

[14a-B13-2] [JSAP Paper Award Speech] Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS

▲ [14a-B13-3] [JSAP Young Scientist Award Speech] Deviation from the law of energy equipartition in a small dynamic-random-access memory

[14a-B13-4] Distribution of the energy levels of single interface-traps: Is it really "U-shaped"?

[14a-B13-5] Charge pumping EDMR method towards single interface defect analysis

[14a-B13-6] Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm

[14a-B13-7] Measurement of SRAM Power-up Data using an Addressable Cell Array Test Structure

▲ [14a-B13-8] A New Write Stability Metric for Yield Estimation in SRAM Cells at Low Supply Voltage

[14a-B13-9] RF characteristics in InGaAs MOSHEMT on quartz glass substrate

[14a-B13-10] Development of Radiation Tolerant Si-MOSFET Ⅱ

[14p-P6-1~11] 13.5 Semiconductor devices and related technologies

△ [14p-P6-1] Study of resistance controllability of analog memory for nanodot-array devices

△ [14p-P6-2] Evaluation of Si single-electron transistor with multiple gates

△ [14p-P6-3] Evaluation of multilevel and analog memory function of resistive random access memory using Ta/Ta₂O₅

[14p-P6-4] Kinetic Monte Carlo Simulation for Switching Probability of ReRAM

[14p-P6-5] Feasibility of inverter with non-power consumption by DNA/Si-MOSFET
and controlled parasitic capacitance

[14p-P6-6] Fabrication of Step-edge FET and Impedance Measurement for Flexible RFID Tag Application

[14p-P6-7] Detection of Breast Cancer Phantom Using CMOS Switching Matrix Circuits

[14p-P6-8] Printed acceleration sensor toward healthcare device

[14p-P6-9] Experimental Study on 2D-Si Based Semiconductor (Ⅳ)

[14p-P6-10] Analysis of a residual image in CMOS image sensor 1

[14p-P6-11] Analysis of a residual image in CMOS image sensor 2

Authentication

Sessions

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[13p-B13-1~12] 13.5 Semiconductor devices and related technologies

△ [13p-B13-7] Impacts of energy relaxation rates on quasi-ballistic hole transport capability in Ge and Si nanowires

△ [13p-B13-8] Equivalent-Circuit Model of Physically-Defined Silicon Triple Quantum Dots

△ [13p-B13-10] Magnetic field dependence of the leakage current in Pauli spin blockade in p-channel silicon double quantum dots

△ [13p-B13-11] Coherent Effects of Interface Charge in a Silicon Quantum Dot

▲ [13p-B13-12] Passivation effects of 3D Array of Si-nanodisks Fabricated with Bio-template and Neutral Beam Etching Process for Photovoltaic Application

[14a-B13-1~10] 13.5 Semiconductor devices and related technologies

▲ [14a-B13-3] [JSAP Young Scientist Award Speech] Deviation from the law of energy equipartition in a small dynamic-random-access memory

▲ [14a-B13-8] A New Write Stability Metric for Yield Estimation in SRAM Cells at Low Supply Voltage

[14p-P6-1~11] 13.5 Semiconductor devices and related technologies

△ [14p-P6-1] Study of resistance controllability of analog memory for nanodot-array devices

△ [14p-P6-2] Evaluation of Si single-electron transistor with multiple gates

△ [14p-P6-3] Evaluation of multilevel and analog memory function of resistive random access memory using Ta/Ta2O5

Authentication

△ [14p-P6-3] Evaluation of multilevel and analog memory function of resistive random access memory using Ta/Ta₂O₅