[14p-P6-1~11] 13.5 Semiconductor devices and related technologies

[14p-P6-5] Feasibility of inverter with non-power consumption by DNA/Si-MOSFET
and controlled parasitic capacitance

〇Naoto Matsuo¹, Hibiki Nakano¹, Akira Heya¹, Tadao Takada¹, Kazushige Yamana¹, Tadashi Sato², Shin Yokoyama² (1.Univ. Hyogo, 2.Hiroshima Univ.)

Keywords:deoxyribonucleic acid, Si-MOSFET, Inverter

We examine the characteristics of the new Si-MOSFET, which replace the Si channel by the deoxyribonucleic acid, DNA. The purpose of this reserch are to fabricate the inverter circuit constructed by the ambipolar type DNA/Si-MOSFET (W/L=100μm/120nm) and conventional n-type Si-MOSFET (W/L=10μm/580μm) and to investigate the input and output characteristics. From the present results, the logic circuit with non-power consunption with a use of the DNA is epected to be realized.