1:30 PM - 3:30 PM
[14p-P6-6] Fabrication of Step-edge FET and Impedance Measurement for Flexible RFID Tag Application
Keywords:semiconductor
RFID (Radio Frequency Identification) technology has attracted great attention as a fundamental technology of IoT (Internet of Things) in recent years. In comparison of RFID tags and current information tags such as barcode or QR code, RFID tags have various advantages such as large data capacities, rewritability of data, simultaneous reading of data etc. This is because the applications of RFID tags is expected in various fields. However, present high production cost of RFID tags prevent from popularizing. Thus, a low cost production process of RFID tags is expected.
The purpose of this study is applying the nanoimprint lithography (NIL) technology which is good for low cost, large-area manufacturing and high throughput. In particular, loop antenna and the FET (Field-Effect Transistor) as a modulation element were fabricated application of NIL technology. SVC-FET (Step-edge Vertical Channel FET) fabricated on the step structure which is formed by NIL has a short channel of micron or sub-micron order and low on-state resistance, and high-speed response are expected. The active layer of the SVC-FET was zinc oxide (ZnO) which is formed at 100 ℃ or less and relatively high mobility. Modulation of the current flowing through the loop antenna by the FET is caused by not only the channel resistance change due to the gate voltage but also a change of a parallel capacitance. Toward application of the RFID tag, we described results of measurement of the source-drain impedance under AC signal having a resonance frequency of the RFID tag.
The purpose of this study is applying the nanoimprint lithography (NIL) technology which is good for low cost, large-area manufacturing and high throughput. In particular, loop antenna and the FET (Field-Effect Transistor) as a modulation element were fabricated application of NIL technology. SVC-FET (Step-edge Vertical Channel FET) fabricated on the step structure which is formed by NIL has a short channel of micron or sub-micron order and low on-state resistance, and high-speed response are expected. The active layer of the SVC-FET was zinc oxide (ZnO) which is formed at 100 ℃ or less and relatively high mobility. Modulation of the current flowing through the loop antenna by the FET is caused by not only the channel resistance change due to the gate voltage but also a change of a parallel capacitance. Toward application of the RFID tag, we described results of measurement of the source-drain impedance under AC signal having a resonance frequency of the RFID tag.